Diamond in medical devices and sensors: An overview of diamond surfaces

Mani, Nour; Rifai, Aaqil; Houshyar, Shadi; Booth, Marsilea A.; Fox, Kate

doi:10.1002/mds3.10127

Cited by 13 publications

(11 citation statements)

References 72 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Future diamond embedded electronics have the potential to create implants with a high level of stability that do not require heavy hermetic insulation as is the case with silicon and other emerging polymer and flexible logic electronics. [ 11 ] The concept offered by the photo‐switch using a diamond pn junction is one of the first diamond implantable logic electronics which can be combined with a diamond sensor to develop a low power diamond time division multiplexer. Each line of an array of solution gated field effect diamond transistor can be sequentially read as in the case of CCD sensor, allowing for the reduction of the cumbersome electric wires that dramatically increase the size of the implant.…”

Section: Resultsmentioning

confidence: 99%

Non‐Volatile Photo‐Switch Using a Diamond pn Junction

Masante

Kah

Hébert

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion, and biomedical interfaces. These strongly demanding technologies can be partly constructed using conventional devices but new hybrid architectures are needed to overpass current performances and add functionalities. Here, a new concept based on the specific properties of a diamond pn junction combined with both an electric and optical control of the depletion region is proposed. Using this junction as a gate in a junction field effect transistor, a proof of concept of a non‐volatile diamond photo‐switch is reported. A diamond pn junction made with nitrogen deep donors in the n‐side is demonstrated to be optically activated thanks to visible light. The n‐type diamond gate is almost devoid of free carriers in the dark and thus insulating. Illuminating the device renders the standard electrical gate control of the transistor efficient. Without illumination, the device is frozen, keeping a permanent memory of the current state. This new way of operating the device opens numerous possibilities to store and transfer information or energy with applications in the field of electrical aircraft or aerospace electronics, power electronics, bio‐electronics, and quantum communication.

show abstract

Section: Resultsmentioning

confidence: 99%

Non‐Volatile Photo‐Switch Using a Diamond pn Junction

Masante

Kah

Hébert

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…electronics 10 . The concept offered by the photo-switch using a diamond pn junction is one of the first diamond implantable logic electronics which can be combined with a diamond sensor to develop a low power diamond time division multiplexer.…”

Section: Discussionmentioning

confidence: 99%

“…Diamond takes also advantage of point defects, like nitrogen vacancy centres, for applications in quantum sensing 4 , quantum communication 5 or spin-based photonic quantum technologies 6 . Finally, its bio-compatibility offers the possibility of integrating diamond electronics into the human body [7][8][9][10][11][12][13] . To summarize, this material provides new opportunities to locally probe electric or magnetic signals, to reliably process data and to safely communicate them in harsh or living environments.…”

Section: Introductionmentioning

confidence: 99%

Non volatile photo-switch using a diamond pn junction

Masante¹,

Kah²,

Hébert³

et al. 2021

Preprint

View full text Add to dashboard Cite

Ultrawide bandgap semiconductor technologies offer potentially revolutionary advances in the rapidly developing areas of quantum communication, short wavelength optics, smart energy conversion and biomedical interfaces. These strongly demanding technologies can be partly constructed using conventional devices but new hybrid architectures are needed to overpass current performances and add functionalities. Here, we propose a new concept based on the specific properties of a diamond pn junction combined with both an electric and optical control of the depletion region. Using this junction as a gate in a junction field effect transistor, we report a proof of concept of a non volatile diamond photo-switch. A diamond pn junction made with nitrogen deep donors in the n?side is demonstrated to be optically activated thanks to visible light. The n-type diamond gate is almost devoid of free carriers in the dark and thus insulating. Illuminating the device renders the standard electrical gate control of the transistor efficient. Without illumination, the device is frozen, keeping a permanent memory of the current state. This new way of operating the device opens numerous possibilities to store and transfer information or energy with applications

show abstract

“…The synergy between optoelectronics and material engineering leads to solutions tailored for specific applications [ 18 ]. A great amount of attention is paid to diamond structures due to their unique properties [ 19 ], making them willingly used in the construction of sensors and elements of measuring heads [ 20 , 21 , 22 , 23 ]. Our previous research [ 24 ] presented the viability of diamond application in Fabry–Perot interferometers as reflective surfaces with increased immunity to mechanical and chemical damage, biocompatibility and prolonged lifespan.…”

Section: Introductionmentioning

confidence: 99%

Diamond Structures for Tuning of the Finesse Coefficient of Photonic Devices

et al. 2022

View full text Add to dashboard Cite

Finesse coefficient is one of the most important parameters describing the properties of a resonant cavity. In this research, a mathematical investigation of the application of diamond structures in a fiber-optic Fabry–Perot measurement head to assess their impact on the finesse coefficient is proposed. We present modeled transmission functions of cavities utilizing a nitrogen-doped diamond, a boron-doped diamond, nanocrystalline diamond sheet and a silver mirror. The diamond structures were deposited using a microwave plasma-assisted chemical vapor deposition system. A SEM investigation of surface morphology was conducted. The modeling took into consideration the fiber-optic Fabry–Perot setup working in a reflective mode, with an external cavity and a light source of 1550 nm. A comparison of the mathematical investigation and experimental results is presented.

show abstract

Diamond in medical devices and sensors: An overview of diamond surfaces

Cited by 13 publications

References 72 publications

Non‐Volatile Photo‐Switch Using a Diamond pn Junction

Non‐Volatile Photo‐Switch Using a Diamond pn Junction

Non volatile photo-switch using a diamond pn junction

Diamond Structures for Tuning of the Finesse Coefficient of Photonic Devices

Contact Info

Product

Resources

About