Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers

Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs

“…Therefore, multi(6)-finger device structures were simulated for both the current Ga 2 O 3 /SiC composite wafer and an ideal case as detailed earlier. Further details of the electrically aware thermal model can be found in our previous work . In Figure , the temperature results can be found for both aforementioned single- and multi (6)-finger Ga 2 O 3 cases, in addition to that for a commercial multi-finger GaN-on-SiC device (details of the device geometry can be found in ref ).…”

“…In other words, the current design only offers its full cooling performance for switching frequencies less than ∼3 kHz, while the ideal case is effective for frequencies up to ∼250 kHz. This switching frequency limit can be further increased by the implementation of top-side cooling solutions such as a diamond passivation overlayer and flip-chipping …”

“…This switching frequency limit can be further increased by the implementation of top-side cooling solutions such as a diamond passivation overlayer 61 and flip-chipping. 62 A recent computational study 15 has predicted that practical multi-finger devices would experience significantly aggravated self-heating (a 4× higher channel temperature than singlefinger Ga 2 O 3 devices under identical power density conditions) due to the thermal cross-talk 16 among adjacent current channels. This trend has been experimentally confirmed by an experimental study 17 on multichannel Ga 2 O 3 FinFETs.…”

“…Further details of the electrically aware thermal model can be found in our previous work. 62 In Figure 8, the temperature results can be found for both aforementioned single-and multi (6)-finger Ga 2 O 3 cases, in addition to that for a commercial multi-finger GaN-on-SiC device (details of the device geometry can be found in ref 62). Due to the thermal cross-talk between the channels, the temperature rise is greater than that of a single-channel device (by comparing with results in Figures 6 and 8).…”

Bismaleimide/Phenolic/Epoxy Ternary Resin System for Molding Compounds in High-Temperature Electronic Packaging Applications

“…In recent years, with the rapid development of fifth generation (5G) mobile communication, Internet of Things, new energy vehicles, and automatic drive, wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), have emerged as the most promising next generation semiconductor materials for applications in high-frequency, high-voltage, and high-power devices. − Epoxy molding compounds (EMC) are one of the most widely used encapsulation materials in electronics industry to protect electronic components from external environments, such as physical impact, dust, moisture, heat, and ultraviolet rays . However, conventional EMC are commonly utilized at temperatures below 200 °C, which cannot meet the requirement of the junction temperature of WBG semiconductors (even reach 250 °C). , Excessive heat will impair the performance of the electronic packaging material including thermal, mechanical, and electrical properties. , Therefore, development of a new packaging material with superior high-temperature stability is becoming increasingly crucial in high-power and high-density electronics industry.…”