Diamond junction FETs based on δ-doped channels

Aleksov, A.; Vescan, A.; Kunze, M.; Gluche, P.; Ebert, Wolfgang; Kohn, E.; Bergmeier, A; Dollinger, G.

doi:10.1016/s0925-9635(98)00393-8

Cited by 83 publications

(41 citation statements)

References 10 publications

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“…In addition, the ground level of the system always locates at this point. The effective Bohr radius is smaller (at very high pressures it approaches the lattice constant), and it has been already shown that in such a case carrier concentrations can reach the order of 10 14 cm −2 [15,16]. Therefore, there is the possibility of having high-density electronic channels.…”

Section: Resultsmentioning

confidence: 99%

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Duque¹

2006

Braz. J. Phys.

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The calculation of the electronic energy levels of n-type δ-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10 13 cm −2

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Section: Resultsmentioning

confidence: 99%

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Duque¹

2006

Braz. J. Phys.

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“…1 However, diamond device technology is almost always limited to those with the p-type H-terminated surface conductive layer, which shows high surface carrier density, because the resistivity of the semiconductive diamond is still high. [2][3][4][5] Most studies have been carried out using the (100)-oriented surface for two reasons: substrate availability and its smooth surface morphology.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Saito

Kim

Hirama

et al. 2011

Journal of Elec Materi

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A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2 O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15 /cm 3 and the B-doped diamond layer was 1.5 lm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2 /Vs and the surface carrier concentration was 1.5 9 10 13 /cm 2 . For the SiO 2 gate (0.76 lm long and 50 lm wide), the maximum measured drain current at a gate voltage of À3.0 V was À75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2 O 3 gate (0.64 lm long and 50 lm wide), these features were À86 mA/mm and 15 mS/ mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.

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“…Most of the electronic properties (sheet density and mobility) of the d structures have been characterized by means of a field effect transistor (FET). 6,7 Temperature dependent impedance spectroscopy measurements have been recently performed to identify the different conduction paths in the stacked structures. 8,9 Hall effect combined to four probes resistivity measurements have also been used to measure the sheet density (p S ) and the carrier mobility (l H ).…”

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confidence: 99%

Hole transport in boron delta-doped diamond structures

Chicot

Thi

Fiori

et al. 2012

Applied Physics Letters

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International audienceThe temperature dependence of the hole sheet density and mobility of four capped delta boron doped [100]-oriented epilayers has been investigated experimentally and theoretically over a large temperature range (6K < T < 500 K). The influence of the parallel conduction through the thick buffer layer overgrown on the diamond substrate was shown not to be negligible near room temperature. This could lead to erroneous estimates of the hole mobility in the delta layer. None of the delta-layers studied showed any quantum confinement enhancement of the mobility, even the one which was thinner than 2 nm

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Diamond junction FETs based on δ-doped channels

Cited by 83 publications

References 10 publications

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Hole transport in boron delta-doped diamond structures

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