Diamond microwave micro relay

Adamschik, M.; Kusterer, J.; Schmid, P.; Schad, K.-B.; Grobe, D.; Flöter, A.; Kohn, E.

doi:10.1016/s0925-9635(01)00619-7

Cited by 37 publications

(24 citation statements)

References 3 publications

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“…In comparison to the most common semiconductor materials, such as silicon or gallium nitride, their properties are several times better [1]. Currently, diamond devices are used in high power electronics [2], diamond diodes [3], high-power switches [4] or high-frequency devices, such as transistors [5]. However, the most common use of BDD materials is for electrodes in electrochemistry [6][7][8] or spectroelectrochemistry [9].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Bogdanowicz¹

2014

Metrology and Measurement Systems

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A conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm -1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

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Section: Introductionmentioning

confidence: 99%

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Bogdanowicz¹

2014

Metrology and Measurement Systems

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“…Cantilever-based MEMS/NEMS structures such as microcantilever sensors [1,2], microaccelerometers [3], atomic force microscopes (AFM) [4][5][6], microswitches [7,8] etc are widely used. Since their discovery, carbon nanotubes have generated various application ideas due to their remarkable properties.…”

Section: Introductionmentioning

confidence: 99%

Pull-in instability study of carbon nanotube tweezers under the influence of van der Waals forces

Wang

Zhang

Zhao

et al. 2004

J. Micromech. Microeng.

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The pull-in instability of two nanotubes under van der Waals force is studied. The cantilever beam with large deformation model is used. The influence of nanotube parameters such as the interior radius, the gap distance between the two nanotubes, etc, on the pull-in instability is studied. The critical nanotube length is determined for each specific set of nanotube parameters. The Galerkin method is applied to discretize the governing equations, and it shows good convergence.

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“…Diamond is the ideal material for high-performance N/MEMS devices due to its outstanding properties such as its extremely high Young's modulus, the highest hardness, hydrophobic surface, low mass density, the highest thermal conductivity, high corrosion resistance upon caustic chemicals, and biocompatibility. However, all the reported diamond N/MEMS devices are based on polycrystalline or nanocrystalline films, which have the disadvantages of the existence of grain boundaries, impurities, and large stress in the films; difficulty in electrical conductivity control; and poor reproducibility [158,159]. Therefore, N/MEMS devices made from these diamonds suffer from degradation in performance and poor reproducibility.…”

Section: Suspended Single-crystal Diamond Nanowires (Scd)mentioning

confidence: 99%

Diamond Nanowires: Fabrication, Structure, Properties and Applications

Zhi

2014

Topics in Applied Physics

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Diamond is a wide band gap semiconductor exhibiting a combination of superior properties, such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness and room-temperature thermal conductivity, etc. It is possible to control and enhance the fundamental properties of diamond by fabricating 1D diamond nanowires, due to the giant surface-to-volume ratio enhancements of 1D nanowires. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. In this chapter, we present a comprehensive, up-to-date review for the diamond nanowires, wherein we will give a discussing for their synthesis along with their structures, properties and applications.

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Diamond microwave micro relay

Cited by 37 publications

References 3 publications

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Pull-in instability study of carbon nanotube tweezers under the influence of van der Waals forces

Diamond Nanowires: Fabrication, Structure, Properties and Applications

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