Diamond on heteroepitaxial cBN on Si(100)

Valence electron structure analysis of epitaxial growth of diamond (100) film on Si and c-BN substrate

“…On the contrary, the REDD between diamond (1 0 0) plane and c-BN (1 0 0) plane is the lowest; therefore, a diamond (1 0 0) film can grow directly on the (1 0 0) c-BN substrate. This is in agreement with the experimental results [24][25][26].…”

“…where r Cð1 0 0Þ and r Sðh k lÞ are average covalent electron density on diamond (1 0 0) plane and that on the (h k l) Table 3 Order of crystal plane n, equivalent bond numbers I ðh k lÞ a , covalent electron density on (h k l) plane in Si r Siðh k lÞ and relative electron density difference between diamond (1 0 0) plane and Si (h k l) plane Dr Cð1 0 0Þ=Siðh k lÞ [24][25][26]. The reason why the diamond (1 0 0) film could not grow directly on the (1 0 0) Si substrate [21][22][23] is that the REDD between diamond (1 0 0) plane and Si (1 0 0) plane is too large ðDr Cð1 0 0Þ=Sið1 0 0Þ ¼ 1:6679Þ to satisfy continuity of electron density across the interface.…”

“…Although a local epitaxy diamond film was obtained by Williams and Glass [23], it was most likely a limited epitaxial growth on silicon carbide. However, Yoshikawa et al [24], Pryor et al [25] and Jin et al [26] deposited diamond film on the (1 0 0) surface of c-BN by DC plasma chemical vapor deposition, plasma-enhanced chemical vapor deposition and hotfilament chemical vapor deposition, respectively. They found that a sharp line of diamond appeared at about 1332 cm À1 by Raman spectroscopy techniques, and that the (1 0 0) plane of the diamond film was oriented parallel to the (1 0 0) plane of c-BN by scanning electron microscopy.…”

Polycrystalline Diamond, Boron Nitride and Carbon Nitride Thin Film Cold Cathodes

“…These nitride-based cold cathode materials were synthesized by a reactive laser ablation process [9]. In this paper, the emission of nitride-based cold cathode materials is compared to the electron emission from n-type polycrystalline diamond synthesized by this author using a microwave plasma enhanced chemical vapor deposition (MPECVD) technique [10].…”

Electron Emission from Cold Cathodes

“…The nitride-based cold cathode materials were synthesized by two different processes; a reactive laser ablation process [6] and a reactive magnetron sputtering process [7]. The n-type polycrystalline diamond was synthesized in the Diamond Laboratory at Wayne State University using a microwave plasma enhanced chemical vapor deposition (MPECVD) technique [8].…”