Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits

Kawarada, Hiroshi

doi:10.1088/1361-6463/aca61c

Cited by 13 publications

(2 citation statements)

References 112 publications

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“…By using diamond electronics, not only the thermal management demands for conventional semiconductors be alleviated but also these devices are more energy efficient and can endure much higher breakdown voltages and harsh environments. On the other hand, with the development of diamond growth technologies, [ 2 ] power electronics, [ 3 ] spintronics, [ 4 ] and microelectromechanical system (MEMS) sensors [ 5 ] operatable under high‐temperature and strong‐radiation conditions, the demand for peripheral circuitry based on diamond CMOS devices has increased for monolithic integration. [ 6 ] P‐type diamonds are readily accessible through bulk boron doping or surface transfer doping of a hydrogen‐terminated diamond surface.…”

Section: Introductionmentioning

confidence: 99%

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Liao,

Sun,

Koizumi

2024

Advanced Science

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Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n‐ and p‐channel conductivity are required for the development of diamond complementary metal‐oxide‐semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n‐type channel MOS field‐effect transistors (MOSFETs). Here, electronic‐grade phosphorus‐doped n‐type diamond epilayer with an atomically flat surface based on step‐flow nucleation mode is fabricated. Consequently, n‐channel diamond MOSFETs are demonstrated. The n‐type diamond MOSFETs exhibit a high field‐effect mobility around 150 cm2 V−1 s−1 at 573 K, which is the highest among all the n‐channel MOSFETs based on wide‐bandgap semiconductors. This work enables the development of energy‐efficient and high‐reliability CMOS integrated circuits for high‐power electronics, integrated spintronics, and extreme sensors under harsh environments.

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Section: Introductionmentioning

confidence: 99%

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Liao,

Sun,

Koizumi

2024

Advanced Science

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“…Numerous diamond field-effect transistors (FETs) are under investigation: H-terminated accumulation FETs (H-FETs) [12], O-terminated inversion channel FETs (I-FETs) [13], metal-semiconductor FETs (MESFETs) [14], and junction FETs (JFETs) [15]. Considering the conduction nature of the channel, one can classify these FETs into two categories: the surface channel group for H-FETs and I-FETs and the bulk channel group for MESFETs and JFETs.…”

Section: Introductionmentioning

confidence: 99%

Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors

Masante¹,

Rouger²,

Pernot³

2021

J. Phys. D: Appl. Phys.

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Diamond has been explored to develop prototype field-effect transistors (FETs). At present, various architectures that are suited to high temperature and high-radiation environments are still under investigation for power electronics applications. Recently, the deep-depletion diamond metal–oxide–semiconductor FET (D3MOSFET) concept has been introduced and demonstrated to be a good candidate for designing efficient diamond MOSFETs. In this paper, a general introduction to the concept of deep depletion is given. The key issues concerning the design and fabrication of this kind of diamond MOSFET are then described and discussed in terms of quasi static performance (the ‘on’ and ‘off’ states). A demonstration of the working regimes of a fabricated normally-on D3MOSFET is described, which reached a critical field of at least 5.4 MV cm−1 at a drain–source bias of −175 V, without electric field relaxation structures. The minimum on-state resistance was measured and found to be R ON,S = 50 mΩ cm2 at 250 ∘C. Finally, the D3MOSFET is contextualized as part of a global research effort to develop diamond power FETs. Some of the main challenges regarding the fabrication of competitive D3MOSFETs and, more generally, diamond power devices are discussed.

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Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep‐Ultraviolet Photodetector with Low‐Voltage Operation

Gu,

Wu,

Zhang

et al. 2024

Adv Funct Materials

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To achieve ultra‐high gain deep‐ultraviolet (DUV) detectors based on ultra‐wide bandgap semiconductors comparable with those of bulky photomultiplier tubes (PMTs), avalanche photodiodes have usually been adopted. However, the high‐operation voltage (∼100 V) is not compatible with monolithic integration. Herein, it is demonstrated that the ultra‐high gain DUV photodetectors (PDs) with low operation voltages (<5 V) can be achieved by using the synergistic effect of surface states and deep defects in a type‐Ib single‐crystal diamond (SCD) substrate. The overall photoresponse, such as the sensitivity, dark current, spectral selectivity, and response speed, of the diamond DUV‐PDs can be simply tailored by the surface hydrogen or oxygen termination of the SCD substrate. The DUV responsivity and external quantum efficiency are more than 2.5 × 104A/W and 1.4 × 107%, respectively, at 220 nm‐wavelength light, comparable with those of PMTs. The DUV/visible light rejection ratio (R220 nm/R400 nm) is as high as 6.7 × 105. The depletion of the 2D hole gas by deep nitrogen defect provides a low dark current and the filling of the ionized nitrogen upon DUV illumination induces a huge photocurrent. The synergistic effect of the surface states and the bulk deep defects opens the avenue for the development of DUV detectors compatible with integrated circuits.

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Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits

Cited by 13 publications

References 112 publications

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Recent progress in deep-depletion diamond metal–oxide–semiconductor field-effect transistors

Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep‐Ultraviolet Photodetector with Low‐Voltage Operation

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