Diamond radiation detectors

Kania, D. R.; Landstrass, M. I.; Plano, M. A.; Pan, Lehua; Han, Sewoon

doi:10.1016/0925-9635(93)90266-5

Cited by 174 publications

(65 citation statements)

References 16 publications

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“…Compared to the widely used Si and Ge detectors, both of which are limited to either room or liquid nitrogen cooled temperatures, respectively, GaN is characterized by a much wider band-gap, making it capable of working in environments well above room temperature. Shortcomings in other wide band-gap semiconductors such as short carrier lifetimes (10 ns) in GaAs due to the dominant EL2 native deep-level defect, 30 the large number of deep-level defects 31 in AlN, and the high cost of diamond 32 limits their implementation as radiation detectors. Compared to SiC that has an in-direct band-gap, GaN has a higher mobility and thus better electrical properties.…”

Section: A Basic Parametersmentioning

confidence: 99%

“…Undoped GaN shows n-type properties due to the residual shallow donors such as oxygen in MOCVD-grown GaN 13 and silicon in HVPE-grown GaN 67 (shallow donors are defined as impurities that ionize at room temperature, which corresponds to an activation energy of 100 meV). Oxygen donors result in a background free-carrier concentration between 10 15 and 10 17 cm À3 with an activation energy of [30][31][32][33] that is below the conduction band minimum (CBM). GaN can be intentionally doped with Si to form an n-type material through either as-growth or post-growth implantation.…”

Section: B Gan Growthmentioning

confidence: 99%

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Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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Section: A Basic Parametersmentioning

confidence: 99%

Section: B Gan Growthmentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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“…[5][6][7] The ionization energy is noted ε e-/h+ , and is the average energy expended by a charged particle or photon to produce one electron-hole pair. ε e-/h+ varies from about 13 eV/e -h + (13-13.6 reported by the majority of researchers [8][9][10] ) to 16.1 eV/e -h + (reported by Kaneko and al. 11 ) for both natural and CVD diamonds.…”

Section: B Cvd Diamond Detector Propertiesmentioning

confidence: 99%

Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons

Dauffy¹,

Koch²

2005

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“…Diamond exhibits superior properties to other semiconducting materials, such as a high thermal conductivity, a high radiation hardness and a low thermal expansion coef®cient, that enable its use as a radiation and photon detector (Franklin et al, 1992;Kania et al, 1990Kania et al, , 1993Manfredotti et al, 1994;Marinelli et al, 1998). For the last few years we have investigated the growth of diamond towards the fabrication of radiation detection devices.…”

Section: Diamond Materials Synthesismentioning

confidence: 99%

Diamond-based semi-transparent beam-position monitor for synchrotron radiation applications

Bergonzo

Brambilla

Tromson

et al. 1999

J Synchrotron Radiat

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A soft X-ray beam-position monitor based on a thin CVD diamond photodetector has been developed for use on third-generation synchrotron radiation facilities, and has been tested on beamlines ID26 and ID12 at the European Synchrotron Radiation Facility. Since diamond exhibits a low absorption to low-energy X-ray photons, this device allows beam-position monitoring with very little beam attenuation at photon energies as low as 2 keV. The devices presented here ®nd their use essentially on low-energy monochromatic beamlines with narrow beam sizes (typically below 1 mm 2 ). Measurements performed on a 20 mm-thick device show that a position sensitivity of 2 mm can readily be achieved with a photon¯ux attenuation of 22% at 4 keV. This allows permanent in-situ monitoring of beam instabilities during experiments.

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Diamond radiation detectors

Cited by 174 publications

References 16 publications

Review of using gallium nitride for ionizing radiation detection

Review of using gallium nitride for ionizing radiation detection

Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons

Diamond-based semi-transparent beam-position monitor for synchrotron radiation applications

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