Diamond RF FETs and other approaches to electronics

Abstract

Diamond semiconductor possesses exceptional physical properties, such as high thermal conductivity, high breakdown field, and high mobility, and is therefore expected to offer the highest performance among semiconductors as high‐frequency, high‐power transistors. At present the most critical issue in achieving diamond transistors is the lack of an n‐type or p‐type dopant with low activation energy. This paper reviews approaches towards electronic‐device application of diamond done mainly by NTT Basic Research Laboratories. First it describes our diamond field‐effect transistors with 0.1‐μm gate length, which exhibit high cut‐off frequencies for the current and power gains, fT and fMAX, of 45 GHz and of 120 GHz, and output power density of 2.1 W/mm at 1 GHz. Next it shows how doping efficiency in ion implantation can be improved by using high‐pressure high‐temperature annealing. Finally, it describes our concept of diamond/nitride heterostructure and presents results that confirm its feasibility. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Impact of Laser Wavelength on the Optical and Electronic Properties of Black Diamond

“…Just to mention a few of them, diamond detectors for ionizing radiation and particles represent a well‐established technology in the world of experimental high‐energy physics, due to extremely high resistance to radiation damage. Moreover, diamond‐based electronic devices show outstanding performance for high‐power and high‐frequency applications, due to the high breakdown field, the low dielectric constant, and the high carrier mobility . Finally, the possibility of achieving negative electron affinity (NEA) by surface hydrogenation makes diamond unique among the materials suitable for the fabrication of efficient thermionic converters …”

Simulation of Thermal Effects on Hydrogen-Terminated Diamond MOSFETs

“…Diamond MESFET and MOSFET devices are suitable for high-power and high-speed applications (1,2), because of the wide band gap, high electron and hole mobility, and high breakdown field (3). However, the regular in-situ doped diamond has its limits.…”