Diamond synthesis from CO-H2 mixed gas plasma

Saitō, Yukio; Sato, Kouji; Gomi, Kenichi; Miyadera, Hiroshi

doi:10.1007/bf00585431

Cited by 43 publications

(8 citation statements)

References 10 publications

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“…At even higher water concentrations the deposition-rate increase has been saturated. Our observations are in a good agreement with previous investigation done by Saito et al [8] in a CH,: H, = 10% : 90% system. Water addition to this plasma gas resulted in much higher deposition rates of diamond.…”

Section: Resultssupporting

confidence: 94%

“…Our growing apparatus is of the conventional microwave type (2.45 GHz) similar to the one reported in [8]. Gases are fed by electronic flow controllers.…”

Section: Methodsmentioning

confidence: 99%

“…When 2% water vapor was added to this composition a valuable increase in the concentration of CH: ions was detected, but at the same time the concentrations of both CH; and CH; ions have been decreased. In a separate work [8] the relationship between the diamond deposition rates and the effect of water vapor addition was measured in a methane : hydrogen (10% : 90%) mixture. It was found that the deposition rates have linearly been increasing with water coilcentrations up to 1.6%.…”

Section: Introductionmentioning

confidence: 99%

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CH5 precursor mechanism for diamond growth

Pintér

Marinelli²,

Tebano³

et al. 1994

Phys. Stat. Sol. (a)

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Deposition rates of polycrystalline diamond films are investigated as a function of concentration of water vapor in a microwave chemical vapor deposition (CVD) apparatus. For CH4:H2 = 2%:98% gas composition the measured deposition rates are compared with mass spectroscopic data published in the literature and predictions suggested by the widely accepted methyl radical (CH3) diamond growth model. Our results do not confirm the CH3 model, but a good correlation is found between the concentration of CH 5+ radicals and the deposition rates of diamond. The main reaction paths leading to diamond deposition from CH 5+ are also presented.

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Section: Resultssupporting

confidence: 94%

“…Our growing apparatus is of the conventional microwave type (2.45 GHz) similar to the one reported in [8]. Gases are fed by electronic flow controllers.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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CH5 precursor mechanism for diamond growth

Pintér

Marinelli²,

Tebano³

et al. 1994

Phys. Stat. Sol. (a)

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“…CH 3 OH 10 and CO, 11 in excess H 2 or by the addition of small amounts of O 2 12 to the standard hydrocarbon/H 2 source gas mixture. The presence of gas phase oxygen can enhance diamond growth rates and also enable diamond synthesis at lower substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Gas-phase composition measurements during chlorine assisted chemical vapor deposition of diamond: A molecular beam mass spectrometric study

Rego

Tsang

May

et al. 1996

Journal of Applied Physics

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Articles you may be interested inReal time spectroellipsometry for optimization of diamond film growth by microwave plasmaenhanced chemical vapor deposition from CO/H2 mixtures Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasmaenhanced chemical vapor deposition on silicon substrates Correlation between gas phase composition of rf plasma of argon diluted tetraethylgermanium and chemical structure of therewith deposited Ge/C films J.

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“…1-6 Furthermore, additions of O-containing atoms to the gas source can improve the diamond film quality, resulting in a lower nondiamond ͑or sp 2 -bonded͒ carbon content, and allowing diamond growth to be extended to lower substrate temperatures while retaining high quality. [7][8][9][10][11][12][13][14][15][16][17] It has been first suggested 3,5,18 and later demonstrated 19 that most of the diamond phase generated by a plasma of CO and H 2 with CO/H 2 ϳ0.05 results from the conversion of CO to hydrocarbon species with the initial step being CO excitation by energetic plasma electrons. In contrast to CH 4 /H 2 mixtures, from which high quality diamond films can be obtained only if CH 4 /H 2 Ͻ0.02, 20 CO/H 2 mixtures yield high quality films over a very wide range 2 -at least two orders of magnitude in the CO/H 2 dilution ratio, from 0.04 to ϳ5, as shown below.…”

Section: Introductionmentioning

confidence: 99%

Real time spectroellipsometry for optimization of diamond film growth by microwave plasma-enhanced chemical vapor deposition from CO/H2 mixtures

Lee

Hong

Messier

et al. 1996

Journal of Applied Physics

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Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasmaenhanced chemical vapor deposition on silicon substratesReal time spectroellipsometry has been applied to determine the deposition rate and thickness evolution of the nondiamond ͑sp 2 -bonded͒ carbon volume fraction in very thin ͑Ͻ1000 Å͒, but fully coalesced, nanocrystalline diamond films prepared on Si substrates by microwave plasma-enhanced chemical vapor deposition from gas mixtures of CO and H 2 . At a substrate temperature of ϳ800°C, high quality diamond films can be obtained over two orders of magnitude in the CO/H 2 gas flow ratio, from 0.04, the lowest value explored, to ϳ5. A well-defined minimum in the sp 2 C volume fraction ͑0.03 in a 600 Å film͒ is observed for a CO/H 2 ratio of 0.2, corresponding to the C-H-O diamond-growth phase-diagram coordinate X H/⌺ ϭ͓H͔/͕͓H͔ϩ͓C͔͖ of 0.9. Under these conditions, the deposition rate increases with increasing temperature over the range of ϳ400-800°C with an activation energy of 8 kcal/mol, behavior identical to that observed for diamond film growth from a CH 4 /H 2 ratio of 0.01. This observation shows that the dominant film precursors in the diamond growth process from CO/H 2 ϭ0.2 are hydrocarbons whose flux at the growing film surface is controlled through the reaction of excited CO with H or H 2 in the plasma. A broad subsidiary minimum in the sp 2 C content is observed, centered near a CO/H 2 ratio of 2, corresponding to an X H/⌺ value of ϳ0.5. Under these gas flow conditions, the deposition rate is a complicated function of temperature, exhibiting a peak near 550°C. This peak shifts to lower temperature with further increases in the CO/H 2 ratio above 2, suggesting a nonhydrocarbon precursor and a different growth mechanism for diamond prepared at high CO/H 2 ratio and low temperature.

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Diamond synthesis from CO-H2 mixed gas plasma

Cited by 43 publications

References 10 publications

CH5 precursor mechanism for diamond growth

CH5 precursor mechanism for diamond growth

Gas-phase composition measurements during chlorine assisted chemical vapor deposition of diamond: A molecular beam mass spectrometric study

Real time spectroellipsometry for optimization of diamond film growth by microwave plasma-enhanced chemical vapor deposition from CO/H2 mixtures

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