Diamonds Containing Controllable Impurity Concentrations

Huggins, Charles M.; Cannon, Peter

doi:10.1038/194829a0

Cited by 53 publications

(12 citation statements)

References 6 publications

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“…The incorporation of impurities into diamond produced by high-pressure synthesis has been extensively investigated by research workers at General Electric [2,3,24]. No element other than boron has been found to be responsible for p-type conductivity, and no effective donor type atom has been found that will substitute for carbon during the growth of single-crystal diamond [24].…”

Section: The Electronic Properties Of Diamondmentioning

confidence: 99%

“…Temperature (K) Figure 3. Best fit of equation (2) to the mobility versus temperature data for a natural semiconducting diamond (from [36]). Figure 4 shows the values of 1 /pI, derived from this analysis, plotted against the donor concentration ND.…”

Section: Hole Mobilitymentioning

confidence: 99%

“…10 years later research workers at General Electric [2] successfully manufactured semiconducting diamond grit. The temperature-gradient method for growing synthetic diamond enabled large, high-quality, type lIb crystals to be produced by General Electric in the 1970's [3], and there has recently been renewed interest by Sumitomo [4] in growing diamonds by this technique.…”

Section: Introductionmentioning

confidence: 99%

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The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

Collins

1989

MRS Proc.

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The electronic and optical properties of diamond are reviewed, with particular emphasis on current research into the production of semiconducting devices. Although many of the properties of diamond seem, at first sight, to be ideally suited to the development of high power microwave and optoelectronic devices, there are also a number of obstacles to be overcome before diamond may be successfully exploited for device applications.

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Section: The Electronic Properties Of Diamondmentioning

confidence: 99%

Section: Hole Mobilitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

Collins

1989

MRS Proc.

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“…Because of the nonequilibrium nature of the diamond synthesis, some impurities will be trapped in the diamond crystals and form substances which are called inclusions [2][3][4]. The inclusions exert the strongest effect on the properties of the synthetic diamond.…”

Section: Introductionmentioning

confidence: 99%

Fracture behavior of HPHT synthetic diamond with micrometers metallic inclusions

He-sheng

Yuan-pei

et al. 2009

Front. Mater. Sci. China

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The fracture behavior of the diamond single crystals with metallic inclusions was investigated in the present paper. Single diamond crystals with metallic inclusions were formed by a special process with high pressure and high temperature (HPHT). The inclusions trapped in the diamond were characterized mainly to be metallic carbide of (Fe,Ni) 23 C 6 or Fe 3 C and solid solution of γ-(Fe,Ni) by transmission electronic microscopy (TEM). The grain size of the inclusions is about micrometers. The fracture characteristics of the diamond single crystals, after compression and heating, were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The fracture sections of the compressed and heated diamonds were found to be parallel to the (111) plane. The interface of the inclusions and diamond is deduced to be the key factor and the original region of the fracture formation. Mechanisms of the fracture behavior of the HPHT synthesized diamonds are discussed.

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“…These requirements have -at least partially -been realised by the high pressure/high temperature (HPHT) growth technique for bulk diamonds and by the non-equilibrium low temperature/low pressure chemical vapour deposition (CVD) methods for diamond films. Milestones in this development are: 1952 discovery of p-conductivity of natural diamonds/type IIb [CUSTERS (1952[CUSTERS ( )] 1955 high pressure-high temperature (HPHT) synthesis of (bulk) diamonds: in a quasithermal equilibrium process graphite is either converted to diamond beyond the phase boundary at ≈ 55 kbar and ≈ 1750 K directly or using molten transition metal solvent catalysts such as nickel or iron [BUNDY (1955[BUNDY ( )] 1962 p-conductivity of HPHT diamonds by boron added to the process as diboran [HUGGINS (1962)] Important data with respect to CVD-diamond deposition: 1911 indications for the formation of diamond under thermal non-equilibrium conditions [BOLTON (1911)] 1962 CVD-diamond forming from CH 4 or CO in H 2 carrier gas at comparably low temperature and at low pressure [EVERSOLE (1962)]: The carbon compound is thermally decomposed and carbon is deposited on the heated diamond substrate as graphite and diamond; graphite is etched by atomic hydrogen 1962 and later importance of atomic hydrogen recognised; significant increase of H-concentration in the gas phase and etching of graphite during deposition by later: -hot filament dissociation -catalytic reactions -electric discharge [DERYAGUIN (1977); SPITSYN (1981); VARNIN (1984) These ideas led to the development of the present CVD-methods among which hot filament CVD and microwave plasma-assisted CVD are probably the most prominent variants. In both cases, substrate temperatures are 800-1000 °C and hydrogen/hydrocarbon gas mixtures at pressures of 50-100 Torr are utilised: Hydrogen serves as the carrier gas with small amounts of hydrocarbon, e.g.…”

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confidence: 99%

Synthetic Diamond — Basic Research and Applications

Sauer

1999

Cryst. Res. Technol.

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Cryst. Res. Technol. 34 1999 2 227-241Non-equilibrium growth of synthetic diamond layers by chemical vapour deposition (CVD) techniques on heterosubstrates has largely been improved over the past decade. On silicon substrates highly textured and oriented diamond films can be grown with optical transparencies and thermal conductivities suitable for broad-band optical windows and heat spreaders. Boron pulse-doping of homoepitaxial diamond layers leads to high p-conductivity at room temperature allowing the fabrication of Schottky diodes and field effect transistors operating at temperatures up to 1000 K. Other devices such as sensors and detectors are being successfully fabricated. At the same time many basic questions remain to be solved including efficient n-type doping.The physical and chemical properties of diamond as deduced from investigations on natural stones over decades are exceptional in many respects suggesting diamond to be useful for numerous interesting applications not attainable with other materials. The following table lists selected properties and values together with related potential applications:property/value application largest hardness (10000 kp/mm² Vickers) of all solid materials hard cutting tool coatings chemical resistance anticorrosion layers, coatings in aggressive ambient small friction coefficient tribological applications bio-compatibility medical applications, bio-sensing Large thermal conductivity Λ = 20 W/cmK @ 300 K heat diffusers e.g. in high power microelectronics Broad-band optical transparency, λ = 2.5 µm... 230 nm Optical windows, lens protection layers, masks for X-ray lithography Large electronic bandgap, E g ≈ 5.5 eV Large carrier mobility µ n = 2200 cm²/Vs µ p = 1600 cm²/Vs Large saturation drift velocity v n = 2.7 × 10 7 cm/s Large break-down field strength E = 5 × 10 5 V/cm

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Diamonds Containing Controllable Impurity Concentrations

Cited by 53 publications

References 6 publications

The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

Fracture behavior of HPHT synthetic diamond with micrometers metallic inclusions

Synthetic Diamond — Basic Research and Applications

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