Die Bonding Performance Using Bimodal Cu Particle Paste Under Different Sintering Atmospheres

Gao, Yue; Zhang, Hao; Li, Wanli; Jiu, Jinting; Nagao, Shijo; Sugahara, Tohru; Suganuma, Katsuaki

doi:10.1007/s11664-017-5464-2

Cited by 85 publications

(22 citation statements)

References 26 publications

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“…However, the wide applications of Ag nanoparticles are largely limited by their high cost [12,13]. Owing to the relative low cost, Cu nanoparticles have been considered as an alternate [14][15][16]. Nonetheless, Cu is very easily to be oxidized, leading to the difficulties for storage and sintering [17,18].…”

Section: Introductionmentioning

confidence: 99%

Robust Ag-Cu Sintering Bonding at 160 °C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor

et al. 2020

Metals

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With the assistance of Pt-catalyzed formic acid vapor, robust Ag-Cu bonding was realized at an ultra-low temperature of 160 °C under 3 MPa for 30 min via the sintering of Ag nanoparticles in situ generated from Ag2O microparticles. The Cu oxide layer at the interface after bonding can be eliminated, which improves the bond strength and electrical conductivity of the joint. A metallic bond contact between the sintered Ag and the Cu substrate is obtained without interfacial solid solution and intermetallic phases, and the shear strength is comparable to previous bonding at a higher temperature. The bonding mechanisms were figured out by comparing the bonding with and without the Pt-catalyzed formic acid vapor. This ultra-low temperature Ag-Cu bonding method may create more flexibilities in the structure design and material selection for power device integration.

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Section: Introductionmentioning

confidence: 99%

Robust Ag-Cu Sintering Bonding at 160 °C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor

et al. 2020

Metals

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“…In addition, a recent study showed that sintered Cu achieved superior thermal cycle reliability compared with sintered Ag because sintered Cu had mechanical properties and fatigue properties superior to those of sintered Ag. [5] Some Cu sinter pastes (Cu paste) for sintering under mechanical pressure-assisted sintering conditions have been proposed; [7,8] however with these, the same issues as in Ag sinter pastes may arise due to the mechanical pressure-assisted bonding process. To overcome such problems, our groups have proposed a Cu paste that can be used to sinter under pressureless sintering condi-…”

Section: Introductionmentioning

confidence: 99%

Bonding Strength of Cu Sinter Die-Bonding Paste on Ni, Cu, Ag, and Au Surfaces under Pressureless Bonding Process

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et al. 2020

Transactions of The Japan Institute of Electronics Packaging

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Herein we report on a copper (Cu) sinter die-bonding paste that sinters under pressureless bonding conditions for power devices operating at high temperatures. The shear strengths of pressureless-sintered Cu on four different metallization layers (Ni, Cu, Ag, and Au) were studied by experiment. The sintering behavior of Cu nanoparticles and diffusion coefficients at interfaces between a bulk Cu layer and the metallization layers was also evaluated by molecular dynamics (MD) simulation. After aging (573 K, 8 h), the shear strength of the Cu sintered to the Ni and Cu layers increased, whereas that of Cu sintered to the Ag and Au layers decreased. The interdiffusion at the interfaces between the sintered Cu layer and the Ag or Au layer increased the interfacial porosity of sintered Cu, which decreased the shear strengths in the sintered Cu/Ag and Cu/Au systems. In contrast, the interfacial porosity between the sintered Cu and the Ni or Cu layer hardly changed after aging. MD simulations revealed that Kirkendall voids were promoted by higher interdiffusion coefficients and a higher ratio of intrinsic diffusion coefficients between a bulk Cu layer and an Ag or Au layer. This consequently increased the porosity of Cu sintered near the interfaces.

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“…Silicon carbide (SiC) and gallium nitride (GaN), are wide band-gap (WBG) semiconductors, are strongly recognized as the best materials for the power electronics applications demanding higher power and higher temperature [1,2]. Since these WBG semiconductors have superior properties, kind of a wide band gap (>3 eV), a high critical electric field (>3 MV/cm) and a high saturation velocity (>2 × 10 7 cm/s), SiC and GaN can enable to overcome the ultimate performances reached by silicon (Si) based devices, in terms of power conversion efficiency [3].…”

Section: Introductionmentioning

confidence: 99%

Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

et al. 2019

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This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.

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Die Bonding Performance Using Bimodal Cu Particle Paste Under Different Sintering Atmospheres

Cited by 85 publications

References 26 publications

Robust Ag-Cu Sintering Bonding at 160 °C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor

Robust Ag-Cu Sintering Bonding at 160 °C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor

Bonding Strength of Cu Sinter Die-Bonding Paste on Ni, Cu, Ag, and Au Surfaces under Pressureless Bonding Process

Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

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