Die Erholung des elektrischen Widerstandes in abgeschrecktem Kupfer

Ramsteiner, F.; Lampert, G.; Seeger, A.; Schüle, W.

doi:10.1002/pssb.19650080324

Cited by 42 publications

(8 citation statements)

References 36 publications

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“…We shall first discuss three attempts to deduce EFv from quenching experi- Since the reaction order for this process has not been determined, nothing conclusive may be said about E Y V . The temperature range is the same as that studied in the above-mentioned experiments of Ramsteiner et al [44], and it is indeed likely that the same process has been investigated in both papers [42,44].…”

Section: Monovacancy Propertiesmentioning

confidence: 99%

Interpretation of Self‐Diffusion and Vacancy Properties in Copper

Mehrer

Seeger

1969

Physica Status Solidi (b)

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110

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Recent tracer measurements of the self-diffusion coefficient by Rothman and Peterson are analysed in conjunction with the determination of equilibrium concentrations of vacant lattice sites by Simmons and Balluffi and the isotope effect on self-diffusion. The following values for monovacancy and divacancy properties are obtained (in the usual notation) : EYv = 1.03 eV, E l v = 1.06 eV, Slv M 0.3 k, E z v -E z v % 0.54 eV, divacancy association entropy AS, v w 2 k, temperature coefficient of monovacancy self-diffusion energy 2 a = = d (ETv & Epv)/d(kT) M 0.5, frequency factors for mono-and divacancy migration v:v exp ( S l v / k ) = 1.4 x 1014 s-1, vgv exp ( S i v / k ) = 1.6 x 1014 s-l. The monovacancy jump frequencies near room temperature are in excellent agreement with the values obtained from dislocation pinning experiments of Thompson and Par& Neue Messungen des Selbstdiffusionskoeffizienten mit radioaktiven Tracern von Rothman und Peterson werden in Verbindung mit der Bestimmung der Gleichgewichtskonzentration leerer Gitterplatze von Simmons und Balluffi und mit Messungen des Isotopeneffektes bei der Selbstdiffusion ausgewertet. Man erhalt folgende Werte fur die Eigenschaften von Einfach-und Doppelleerstellen (in der ublichen Bezeichnungsweise) : El v = 1,03 eV, EFv = 1,06 eV, Slv M 0,3 lo, E z v -E z v M 0,54 eV, Assoziationsentropie der Doppelleerstelle AS2 v M 2 k, Temperaturkoeffizient der Selbstdiffusionsenergie fur Einfachleerstellen 2 a = d (ETv + E r v ) [ t ( k T ) % 0,5, Frequenzfaktoren fur Einfach-und Doppelleerstellenwanderung vfv exp ( S l v l k ) = 1,4 x 10" s-l, v i v exp ( S , v / k ) = 1,6 x 1014 8-l. Die Sprungfrequenzen der Einfachleerstellen in der Nahe der Raumtemperatur sind in ausgezeichneter ubereinstimmung mit Werten, die man aus Experimenten von Thompson und Par6 uber Versetzungsverankerung erhalt.M

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Section: Monovacancy Propertiesmentioning

confidence: 99%

Interpretation of Self‐Diffusion and Vacancy Properties in Copper

Mehrer

Seeger

1969

Physica Status Solidi (b)

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110

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“…[27,28] All anneal out by rapid room-temperature or near-room-temperature diffusion. Of particular interest here, Pickering and Wagner [1] calculated the diffusivity of quenched-in divacancies in copper as 1.3 ϫ 10 Ϫ12 cm 2 /s from the resistivity measurements of Ramsteiner et al [29] -remarkably close to the maximum values reported in Figure 12 for Ag diffusivities in Cu. Returning to the issue of SCC, which motivated the present investigation, Aaltonen et al [7] calculated diffusivities of 10 Ϫ13 to 10 Ϫ10 cm 2 /s as necessary to sustain the crack-advance increments measured by Beggs et al [30] in brass and stainless steel.…”

Section: Data Analysis and Discussionmentioning

confidence: 81%

Room-temperature diffusion in Cu/Ag thin-film couples caused by anodic dissolution

Jones

Jankowski

Davidson

1997

Metall Mater Trans A

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Thin, 100-nm films of first silver and then copper were deposited consecutively onto inert substrates by magnetron sputter deposition. Constant anodic current densities were applied at room temperature to dissolve the outer copper film to varying depths. The 50Cu/50Ag interface, derived from the auger electron spectroscopic concentration-depth profile, initially moved into the copper toward the outer dissolving surface, indicating enhanced diffusion of copper into silver. After longer times at all anodic current densities, the interface reversed and moved back toward the underlying silver-rich layer, indicating that eventually diffusion of silver into copper predominated. The reversal time was inversely proportional to the anodic current density. These effects are explained by anodic formation of subsurface vacancies which migrate as divacancies to the copper/silver interface where they affect interface movements by the well-known Kirkendall mechanism. Calculated diffusivities up to 10 Ϫ12 cm 2 /s at maximum anodic current densities of 900 A/cm 2 are dramatically above any that are normally observed at room temperature.

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“…Since some curvature is indicated in the data plotted either way, this indicates that the process would be best considered as one with a variable activation energy. The measured activation energy of (1.1 & 0.1) eV which is associated with the temperature range around 200 "C, corresponds to the second stage of annealing in quenched copper, as measured by resistivity changes [21], and is, accordingly, assigned to single vacancy motion.…”

Section: Isothermal Studies Between 190 and 300 O Cmentioning

confidence: 99%

A study of quench hardening in copper

Davidson

Galligan

1968

Physica Status Solidi (b)

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Quenching studies of copper, under clean conditions, have revealed a two stage hardening mechanism. The first stage corresponds to the formation of small vacancy clusters and occurs around room temperature, while the second stage is centered around 250 O C . Measurements of the dislocation loop density in quenched, aged specimens in the second stage of hardening, show that Frank vacancy loops are the major obstacle to dislocation motion. The temperature dependence of the critical resolved shear strcss, in quenched specimens, was also measured throughout the aging process and compared with various expressions for the interaction of mobile dislocations with different obstacles. These results indicate quite clearly that Seeger's theory of obstacle shearing is favored over Fleisher's theory of asymmetrical distortion in this case. An experimental value of the cutting process is about 5 eV. In agreement with this mechanism, electron microscope observations show that Frank dislocation loops, within a slip plane, are removed during the first few percent of plastic deformation. Finally, the quench hardening is only removed a t very high temperatures, in the same temperature range where the Frank loops are removed.Abschreckungsuntersuchungen an Kupfer unter sauberen Bedingungen haben einen Zweistufenmechanismus fur die Verfestigung ergeben. Die erste Stufe besteht aus der Bildung kleiner Leerstellenagglomerate bei Zimmertemperatur, wiihrend die zweite Stufe bei etwa 25OoC erscheint. Messungen der Dichte der Versetzungsschleifen in abgesohreckten, gealterten Proben in der zweiten Stufe der Verfestigung zeigen, daB Frankache Leerstellenschleifen das Haupthindernis fur die Versetzungswanderung sind. Die Temperaturabhangigkeit der aufgeliieten kritischen Scherspannung in abgeschreckten Proben wurde ebenfalls wiihrend des Alterungsprozesses gemessen und mit verschiedenen Ausdriicken fiir die Wechselwirkung beweglicher Versetzungen mit verschiedenen Hindernissen verglichen. Diese Ergebnisse zeigen ganz klar, da8 in diesem Falle die Seegersche Theorie der Hindernisscherung geeigneter ist ale die Fleischereche Theorie der asymmetrischen Verzermng. Ein experimenteller Wert fiir den AbschneideprozeB ist ungefiihr 5 eV. In Obereinstimmung mit dem Mechanismua zeigen elektronenmikroskopische Beobachtungen, daB Franksche Versetzungsschleifen innerhalb einer Gleitebene schon wiihrend der ersten Prozente der plastischen Deformation beseitigt werden. Die Abschreokungsverfestigung kann nur bei sehr hohen Temperaturen beseitigt werden, im gleichen Temperaturbereich, wo die Frankschen Schleifen verschwinden.

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Die Erholung des elektrischen Widerstandes in abgeschrecktem Kupfer

Cited by 42 publications

References 36 publications

Interpretation of Self‐Diffusion and Vacancy Properties in Copper

Interpretation of Self‐Diffusion and Vacancy Properties in Copper

Room-temperature diffusion in Cu/Ag thin-film couples caused by anodic dissolution

A study of quench hardening in copper

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