Dielectric and Electromechanical Properties of Pb(Zr,Ti)O₃Thin Films for Piezo-Microelectromechanical System Devices

Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields

“…The dielectric constant measured at the threshold field will approach the intrinsic dielectric permittivity because the film is approaching a single domain state. 20 Fitting the rapid drop and the gradually decreasing sections of the permittivity-field curve (0-100 MV/m) in Fig. 1 and extending the lines to intercept the x-and y-axis give a reasonable estimate of the threshold electric field required for complete domain wall suppression and the intrinsic permittivity of PLZT films at room temperature.…”

Grain size effect on the poling of soft Pb(Zr,Ti)O3 ferroelectric ceramics

“…Therefore, the dielectric constant measured at large applied voltage values will approach the intrinsic dielectric constant. 28,29 Based on the domain wall motion model, 30,31 it was proposed that the losses are due to domain wall motions, and the wall contribution is proportional to the total domain wall area per unit volume. During poling many domain walls are eliminated and do no longer contribute to the loss, so that the loss factor would be expected to reduce.…”

Impact of layer defects in ferroelectric thin films

“…There is also an increasing interest in studying defects and their related strain fields in ferroelectrics (FE), in particular in low dimensional systems [1]. A broad variety of defects have been implemented and analyzed mainly in ABO 3 -type FE, such as BaTiO 3 and Pb(Zr,Ti)O 3 (PZT) [1,2,3,4], bismuth layer-structured FE, such as Bi 4 Ti 3 O 12 (BTO) [5,6,7,8] as well as SrBi 2 Ta 2 O 9 (SBT) [9,10,11]. To control the polarization and piezoelectric properties, PZT is often modified by various elements of lower valency (K, Mn, Fe) and higher talent (La, Nb, Ta) cations.…”

“…While the bulk PZT ceramics have been well investigated, there is still a lack of understanding the piezoelectric and dielectric properties of PZT thin films, particularly as a function of composition. With increasing Ti-content, larger remanent polarization and higher coercive voltage are observed [1]. Impact of misfit dislocations on the polarization instability of epitaxial nanostructured FE perovskites (PZT nanoislands) is investigated by Chu et al [4].…”