Dielectric and ferroelectric properties of (Bi0.5Na0.5)0.94Ba0.06Ti1−xAlxO3−δ lead-free ferroelectric ceramics

Lian, Han‐li; Cheng, Rui-xue; Qiu, Yan-zi; Shi, Jinyan; Chen, Xiaoming

doi:10.1007/s10854-020-03331-9

Cited by 6 publications

(1 citation statement)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although BNT ceramic has many good characteristics, it has a few drawbacks also including poor dielectric performances, difficulty to pole sufficiently because of the high value of coercive field (Ec) of 73 kV/cm, the high value of electric conductivity, and volatization of Bi ion at the time of sintering at high temperature. To avoid/solve these problems to enhance the material properties, suitable substitution at different sites or addition of some perovskite materials in the parent compound has been attempted [14,15]. In the present work calcium stannate (CaSnO3) and calcium selenate (CaSeO3) with equal ratios (i.e., x=5%, 10%, and 15%) have been added to the pure BNT compound, so that in the A site along with bismuth (Bi) and sodium (Na) a new calcium ion (Ca) is created, In the same manner for B site Ti (Sn) and selenium (Se) atoms are added together with titanium (Ti), hence the title multi-substituted Bi0.5Na0.5TiO3 ceramics is justified.…”

Section: Introductionmentioning

confidence: 99%

Studies of structural and electrical characteristics of multi-substituted Bi0.5Na0.5TiO3 ferroelectric ceramics

Arya

Choudhary

2021

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

In this communication, preliminary structural and detailed electrical characteristics of the CaSnO3/CaSeO3 modified Bi0.5Na0.5TiO3 ceramics of a general chemical composition (1-2x) [Bi0.5Na0.5TiO3] + x (CaSnO3) + x (CaSeO3) with x= 0, 0.05, 0.10, 0.15, prepared by hightemperature solid-state reaction method with calcination and sintering temperature 925 o C and 950 o C respectively for 5 h, have been reported. Structural and electrical characteristics of the parent compound have significantly been tailored by the addition of the equal percentage of CaSnO3, CaSeO3 over a wide range of temperature (25 o C -400 o C) as well as frequency (1 kHz-1MHz). Analysis of room temperature X-ray diffraction (XRD) data confirmed the development of single-phase compound (with rhombohedral symmetry) with very small amount of impurity phase with higher concentrations (x). In the dielectric spectroscopy, two dielectric peaks are observed at around temperatures 210 o C and 320 o C indicating multiple phase transitions of different types including the ferroelectric to para-electric through anti-ferroelectric. Impedance analysis of data exhibits both negative/positive temperature coefficient of temperature (i.e., semiconductor behavior) of the materials. The Nyquist plots determine the grain and grain boundary effect in capacitive and resistive properties of the materials, and also the non-Debye type of relaxation. The room temperature hysteresis loop confirms the existence of ferroelectricity in the materials. The leakage current characteristics also determine the Ohmic behavior of the materials.

show abstract

Section: Introductionmentioning

confidence: 99%