Dielectric and ferroelectric properties of Ba0.8Sr0.2Ti1−5x/4NbxO3 ceramics

Cao, Wanqiang; Yang, Li; Ismail, Mukhlis M.; Feng, Pingfa

doi:10.1016/j.ceramint.2011.01.031

Cited by 16 publications

(2 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…44-0093. 19 The morphology and cross-sectional of the BST film formed on Si substrates after treated TiO 2 film hydrothermally at 150 °C for 2 h, is examined using FESEM images and is shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

Photovoltaic Response of Heterojunction Photodiode based on Ba_0.8Sr_0.2TiO₃ Nanorod Film

Salman¹,

Ismail²,

Sami³

2023

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

A BST/Si photodiode has been effectively synthesized by growth BST on the p-type Si (100) substrate utilizing the hydrothermal process. Screen printing was used to prepare TiO2 film deposited on Si substrate, then immersing TiO2 film in Ba(OH)2 and Sr(OH)2 solution to fabricate BST/Si photodiode using a hydrothermal process. The BST film was studied using X-ray diffraction, field-emission scanning electron microscopy, and reflection spectra. The band gap was calculated for a BT film using the reflection methods. Hall measurement confirmed the n-type conductivity of BST film. Curie temperature of the BST film was observed at 87°C according to DC measurement. The dark and illuminated (J-V) characteristics of the BST/Si photodiode have been measured under simulated AM1 conditions using a Xenon lamp. The Shockley-Read-Hall recombination caused unequal electron and hole capture rates that dominated to the I-V characteristics resulting in an absence of classic superposition phenomena. The open circuit voltage (Voc) measurement is carried out to know the recombination mechanism in an open circuit. The BST/Si film showed more conductivity after increasing illuminating power density, which qualifies it for photovoltaic applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Photovoltaic Response of Heterojunction Photodiode based on Ba_0.8Sr_0.2TiO₃ Nanorod Film

Salman¹,

Ismail²,

Sami³

2023

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Ba 1− x Sr x TiO 3 (BST) has attracted significant interest due to its electrically tunable dielectric properties for potential applications in wireless telecommunications, as tunable mixers, delay lines, filters, and phase shifters for steerable antennas 1–3. Because Ba 1− x Sr x TiO 3 is the most easily compatible host compound for different dopants, the occupation by both isovalent and aliovalent cations at equivalent sites can be used to tailor its electrical properties to meet the requirements of various device applications 4–7. Manganese is an element of special interest, because its oxidation states include Mn 2+ and Mn 4+ , which might isovalently subsitute Ba 2+ /Sr 2+ and Ti 4+ , respectively.…”

Section: Introductionmentioning

confidence: 99%

Lattice dynamics and dielectric response of Ba_0.4Sr_0.6−yMn_yTiO₃ ceramics in a wide frequency range

Zhang

Zhai

et al. 2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

Lattice dynamics and dielectric behavior in a wide frequency range of Ba0.4Sr0.6−yMnyTiO3 ceramics were investigated by using infrared (IR) spectroscopy and dielectric measurements. X‐ray diffraction results revealed that only perovskite phase was visible for all compositions. Mn occupied A‐site preferably as Mn2+ when y ≤ 0.02; whereas when y ≥ 0.05, Mn occupied B‐site and was oxidized to Mn3+. Dielectric measurements and IR analysis indicated that the hardening of the softest mode was not remarkable with increasing Mn concentration, which resulted in an unremarkable change in tunability. Compared to the samples with y ≤ 0.02, those with y ≥ 0.05 had a higher fitted damping factor, resulting from the distortion of the perovskite lattice caused by the incorporation of Mn at the Ti‐site, which led to a low intrinsic quality factor.

show abstract

Structural, dielectric, thermal and electrical characteristics of lead-free double perovskite: BiHoZnCeO6

Padhy

Dehury²,

Choudhary

et al. 2020

Appl. Phys. A

View full text Add to dashboard Cite

Dielectric and ferroelectric properties of Ba0.8Sr0.2Ti1−5x/4NbxO3 ceramics

Cited by 16 publications

References 15 publications

Photovoltaic Response of Heterojunction Photodiode based on Ba_0.8Sr_0.2TiO₃ Nanorod Film

Photovoltaic Response of Heterojunction Photodiode based on Ba_0.8Sr_0.2TiO₃ Nanorod Film

Lattice dynamics and dielectric response of Ba_0.4Sr_0.6−yMn_yTiO₃ ceramics in a wide frequency range

Structural, dielectric, thermal and electrical characteristics of lead-free double perovskite: BiHoZnCeO6

Contact Info

Product

Resources

About

Dielectric and ferroelectric properties of Ba0.8Sr0.2Ti1−5x/4NbxO3 ceramics

Cited by 16 publications

References 15 publications

Photovoltaic Response of Heterojunction Photodiode based on Ba0.8Sr0.2TiO3 Nanorod Film

Photovoltaic Response of Heterojunction Photodiode based on Ba0.8Sr0.2TiO3 Nanorod Film

Lattice dynamics and dielectric response of Ba0.4Sr0.6−yMnyTiO3 ceramics in a wide frequency range

Structural, dielectric, thermal and electrical characteristics of lead-free double perovskite: BiHoZnCeO6

Contact Info

Product

Resources

About

Photovoltaic Response of Heterojunction Photodiode based on Ba_0.8Sr_0.2TiO₃ Nanorod Film

Photovoltaic Response of Heterojunction Photodiode based on Ba_0.8Sr_0.2TiO₃ Nanorod Film

Lattice dynamics and dielectric response of Ba_0.4Sr_0.6−yMn_yTiO₃ ceramics in a wide frequency range