Dielectric and impedance study of polycrystalline Li0.35−0.5Cd0.3Ni Fe2.35−0.5O4 ferrites synthesized via a citrate-gel auto combustion method

Significantly Enhanced Energy Storage Density and Efficiency at Low Electric Fields in Lead-Free Bi0.5Na0.25K0.25TiO3–K0.5Na0.5NbO3 Piezoceramics

“…It suggests that the potential barrier was generated by space charge polarization in the grain boundary region. It reduces the space charge polarization in a confined region (grain boundary), resulting in a lower value of the dielectric constant . Furthermore, it can be noticed that there is visible growth of the permittivity peak ( T Ferroelectric to Relaxor‑ferroelectric ) in the range of 75 to 150 °C for all samples.…”

Dielectric switching in correlation with the structural phase transitions in tetrapropylammonium perchlorate

“…A high value of the dielectric permittivity at low frequency can be contributed to the presence of space charge polarization, which generates a potential barrier, and results in polarization of bound charge, which leads to higher values of the real part of permittivity. 30,31 The frequency dependence of the imaginary part of complex permittivity ε ′′ at different temperatures is shown in Fig. 7b.…”

Magnetic and electrical transport properties of Cu0.5Ni0.5Fe2O4 ferrite synthesized by plasma arc discharge process

“…Increased lattice vibrations and the creation of phonons can contribute to the increase in dielectric loss with temperature. As a result, electron-phonon scattering occurs due to their interactions with charge carriers [52]. It is worth noting that prior studies have reported an increase in dielectric loss with rising temperature [45].…”

“…DC conductivity tends to increase with increasing temperature, which can be attributed to thermal energy initiating electron transitions from the valence band into the conduction band, resulting in a higher DC conductivity [45]. The temperature dependence of DC conductivity can be described using Arrhenius' equation as follows [52]: In the given equation, the symbol E a represents the activation energy, σ 0 is a constant that does not depend on temperature, k is the Boltzmann constant, and T is the absolute temperature. Due to the association between the electrical energy barrier and the activation energy, the probability of the charge carrier hopping is determined by the activation energy.…”

“…Furthermore, hopping rates between ion pairs at octahedral sites increase with temperature due to the increase in mobility of charge carriers. To be more precise, the activation energy (E a ) is more closely related to how mobile charge carriers are rather than how concentrated they are [52].…”