Dielectric and Nonohmic Properties of CaCu3Ti4O12/SrTiO3 Ceramics

Xue, Renzhong; Liu, Dewei; Chen, Zhenping; Hirata, Dai; Chen, Jing; Zhao, Gaoyang

doi:10.1007/s11664-015-3645-4

Cited by 15 publications

(2 citation statements)

References 32 publications

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“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] This is because many electronic technologies require high-permittivity dielectric material to fabricate small-sized multilayer ceramic capacitors with high energy storage density. Many interesting dielectric and electrical phenomena have been observed in CCTO, in both single-and polycrystalline ceramics.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing in O2 and Mechanisms Contributing to the Overall Loss Tangent of CaCu3Ti4O12 Ceramics

Boonlakhorn

Thongbai

2015

Journal of Elec Materi

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Mechanisms contributing to the overall loss tangent (tan d) of CaCu 3 Ti 4 O 12 ceramics were investigated via doping with Yb 3+ ions and annealing in an O 2 atmosphere. A high tan d value for CaCu 3 Ti 4 O 12 ceramics in a low-frequency range was primarily caused by direct-current (DC) conduction. It can be greatly suppressed by annealing in an O 2 atmosphere to fill oxygen vacancies at grain boundaries (GBs) and enhance GB resistance. The tan d value in a middle frequency range originated from oscillation of ionic dipole moments. Ceramics which contain a relatively high atomic mass number (Yb 3+ -doped CaCu 3 Ti 4 O 12 ) generated more dissipated energy compared with undoped ceramics. A rapid increase in tan d in a high frequency range was attributed to the relaxation of active dipole moments that gave rise to the giant dielectric response. Balancing these factors, while simultaneously retaining high values of dielectric permittivity, is an ideal strategy to effectively improve the dielectric performance of CaCu 3 Ti 4 O 12 -based compounds.

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Section: Introductionmentioning

confidence: 99%

Effect of Annealing in O2 and Mechanisms Contributing to the Overall Loss Tangent of CaCu3Ti4O12 Ceramics

Boonlakhorn

Thongbai

2015

Journal of Elec Materi

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“…Also, the TeO2 doping increases the resistance value of the grain boundaries Rgb and consequently a reduction of the polarization at the low frequency interfaces [21]. Renzhongxue et al synthesized the composite CaCu3Ti4O12-SrTiO2 (x=0.0 at 0.02) using the solidstate route and revealed that the addition of SrTiO3 causes increase in the dielectric constant and a decrease and a decrease in the loss tangent this leads to an improvement in the linear current-voltage properties have been considerably enhanced [22]. Inthiswork, we synthesis a new((1-x) CCTO-x PL0.2T (x=0.0; 0.2; 0.3; 0.4; 0.7 and 1.0) compositesbyhybrid method.…”

Section: Introductionmentioning

confidence: 99%

Effect of Pb0.8La 0.2Ti0.95O3 Doping on the Electrical and Dielectric Properties of CCTO Compound Synthesized by Hybrid Method

Slaoui,

Gouitaa,

Harrach

et al. 2023

MSF

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In this work we studied the effect of the addition PL0.2T on the structural, electrical properties of the CCTO ceramic of (1-x) CaCu3Ti4O12 - x Pb0.8 La0.2Ti0.95O3 ((1-x) CCTO-x PL0.2T) with x=0.0; 0.2; 0.3; 0.4; 0.7and 1.0. The composites materials are prepared by hybrid method (solid-sol-gel) and sintered at 1000 °C for 4H. The X-Ray diffraction results reveal that the PL0.2T crystallizes in pure pseudo-cubic phase with Pm3m space group, while the CCTO show a cubic phase structure with space group Im-3. The composites samples of (1-x) CCTO-x PL0.2T indicate the coexistence of two cubic and pseudo-cubic phases. The SEM image indicate a change in grain shape and decrease of average grain size with increasing of PL0.2T content. The dielectric measurements as a function of temperature, show two anomalies which exhibit a relaxation phenomenon for x=0.2 and x=0.7 and a decrease dielectric constant value, it’s can be explained by the phase transition phenomenon of PL0.2T. The Cole-Cole diagram for all samples showed existence of two semi-arcs attributed to the grains and grains boundary, and it is found that the Rg values are smaller than the Rgb. The electrical properties give evidence on the formation of interior, barrier layer capacity (IBLC).

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Strontium doped CaCu3Ti4O12 ceramics with very low dielectric loss synthesized by the sol–gel method

et al. 2022

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Dielectric and Nonohmic Properties of CaCu3Ti4O12/SrTiO3 Ceramics

Cited by 15 publications

References 32 publications

Effect of Annealing in O2 and Mechanisms Contributing to the Overall Loss Tangent of CaCu3Ti4O12 Ceramics

Effect of Annealing in O2 and Mechanisms Contributing to the Overall Loss Tangent of CaCu3Ti4O12 Ceramics

Effect of Pb<sub>0.8</sub>La <sub>0.2</sub>Ti<sub>0.95</sub>O<sub>3</sub> Doping on the Electrical and Dielectric Properties of CCTO Compound Synthesized by Hybrid Method

Strontium doped CaCu3Ti4O12 ceramics with very low dielectric loss synthesized by the sol–gel method

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