Dielectric and Optoelectronic Properties of InSe/CdS/CdSe Heterojunctions

Abusaa, Muayad; Qasrawi, A.F.; Shehada, Sufyan R.

doi:10.1007/s11664-018-6562-5

Journal of Elec Materi

2018

DOI: 10.1007/s11664-018-6562-5

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Dielectric and Optoelectronic Properties of InSe/CdS/CdSe Heterojunctions

Muayad Abusaa

A.F. Qasrawi

Sufyan R. Shehada

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Cited by 2 publications

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“…As for examples, coating CdSe (E g =1.78 eV) onto CdS ( eV) 21,22 enabled CdSe exhibiting microwave resonator characteristics. In addition to this feature, in most of the mentioned heterojunctions that are comprising CdSe 6,[19][20][21][22] , inverted two MOSFET characteristics is not observed. As a result coating CdSe with GeO 2 is necessary for allowing multifunctionalities of the CdSe/GeO 2 interfaces.…”

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confidence: 99%

Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

Khusayfan¹,

Khanfar²,

Alharbi³

2021

Mat. Res.

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Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p −type germanium dioxide coated onto Au/ n -CdSe substrates and top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out with the help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers of CdSe and GeO 2 . The design of the energy band diagram has shown the formation of two Schottky arms (Au/n −CdSe, C/GeO 2 ) at the interfaces of the n − CdSe/ p −GeO 2 layers. The capacitance-voltage characteristics which are recorded in the frequency domain of 1.0-50.0 MHz revealed the ability of formation of NMOS and PMOS layers. The signal frequency controlled built in potential is tunable in the range of 2.34 and 5.18 eV. In addition, the conductance and capacitance spectral analyses in the frequency domain of 10-1800 MHz revealed the domination of current conduction by tunneling and correlated barriers hoping below and above 760 MHz, respectively. In addition to its features as MOSFET devices, the Au/CdSe/GeO 2 /C hybrid devices are found to be appropriate for use as microwave cavities.CdSe/GeO 2 , MOSFET, band diagram, microwave cavity.

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Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

Khusayfan¹,

Khanfar²,

Alharbi³

2021

Mat. Res.

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Structural, dielectric and impedance functionalities of La0.01Cu0.99O nanocrystals

Deepapriya,

Rodney,

Udayashankar

2023

J Mater Sci: Mater Electron

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Dielectric and Optoelectronic Properties of InSe/CdS/CdSe Heterojunctions

Cited by 2 publications

References 18 publications

Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

Design and Characterization of Au/CdSe/GeO2/C MOSFET Devices

Structural, dielectric and impedance functionalities of La0.01Cu0.99O nanocrystals

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