Dielectric and structural analysis of hexagonal and tetragonal phase BaTiO3

Yusoff, Nurul Huda; Osman, Rozana Aina Maulat; Idris, Mohd Sobri; Muhsen, Ku Noor Dhaniah Ku; Nor, N. I. M.

doi:10.1063/1.5142130

Cited by 26 publications

(12 citation statements)

References 11 publications

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“…In our geometry, the capacitance can be calculated as two parallel plate capacitors in series, one with SiO 2 and another one with BTO as dielectrics where C X = ε 0 ·ε x / d x with ε 0 the vacuum electrical permittivity and ε x and d x the relative permittivity and the thickness of medium “ x ” (SiO 2 or BTO) respectively. Because of the very high ε r expected for BTO (∼4000), − in this geometry the capacitance will be strongly dominated by the SiO 2 contribution. This is advantageous to extract accurate field-effect mobility values even in the case of not knowing the exact dielectric value of the BTO ultrathin layer.…”

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confidence: 73%

“…This is advantageous to extract accurate field-effect mobility values even in the case of not knowing the exact dielectric value of the BTO ultrathin layer. We have fabricated a parallel plate capacitor using a freestanding BTO layer as dielectric to experimentally determine its dielectric constant (see Supporting Information Figure S12) finding a value of ε BTO = 4700 ± 500, in good agreement with the values reported for bulk BTO at room temperature. − In Figure a we note that the additional structure in the IV g curve (double hump feature) is a manifestation of the ferroelectric switching of the BTO layer. Similar features have been observed in devices with a ferroelectric layer. ,,, …”

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confidence: 99%

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Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

et al. 2022

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We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.

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confidence: 73%

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confidence: 99%

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

et al. 2022

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“…It can simulate solar cell structures and calculate their basic characteristics, such as band diagrams, external quantum efficiency, generation and recombination profiles, cell current densities, J–V characteristics including open-circuit voltages ( Voc ), short-circuit currents ( Jsc ), fill factor ( FF ), and power conversion efficiency ( PCE ). For SCAPS simulations, the input parameters are taken from the literature [ 2 , 11 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 ] and our experimental results, which are listed in Table 1 . The interface defects at ETL/absorber and absorber/HTL interfaces are considered neutral and single.…”

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confidence: 99%

Simulation and Optimization of FAPbI3 Perovskite Solar Cells with a BaTiO3 Layer for Efficiency Enhancement

et al. 2022

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Since the addition of BaTiO3 in perovskite solar cells (PSCs) provides a more energetically favorable transport route for electrons, resulting in more efficient charge separation and electron extraction, in this work we experimentally prepared such a PSC and used a modeling approach to point out which simulation parameters have an influence on PSC characteristics and how they can be improved. We added a layer of BaTiO3 onto the TiO2 electron transport layer and prepared a PSC, which had an FTO/TiO2/BaTiO3/FAPbI3/spiro-OMeTAD/Au architecture with a power conversion efficiency (PCE) of 11%. Further, we used the simulation program SCAPS-1D to investigate and optimize the device parameters (thickness of the BaTiO3 and absorber layers, doping, and defect concentration) resulting in devices with PCEs reaching up to 15%, and even up to 20% if we assume an ideal structure with no interlayer defects. Our experimental findings and simulations in this paper highlight the promising interplay of multilayer TiO2/BaTiO3 ETLs for potential future applications in PSCs.

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“…TC for PZT in this study is a little higher than reported TC for the composition PZT 50/50, showing the fabricated film composition is on the Ti-rich end as discussed above. PZT-based ceramics are virtually among the best dielectric materials with a highest dielectric constant compared with that of other dielectric ceramics such as BaTiO3 (εr~ 6,000 at 1 kHz), PbTiO3 (1,100 at 1KHz) (Yusoff et al, 2020;Chaudhari & Bichile, 2013).…”

Section: Electrical Measurementsmentioning

confidence: 99%

Fabrication of PZT Thick Film by Electrophoretic Deposition on the Platinum Substrate

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Sterianou

Ian

et al. 2022

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PbZrxTi1-xO3 compositions near morphotropic phase boundary have been reported to have high piezoelectric properties. In this study, Pb(Zr0.5Ti0.5)O3 (PZT 50/50) powder was produced by the solid-state reaction from the relevant oxides at 950oC. Phase analysis using X-ray diffraction revealed the single phase of the tetragonal perovskite structure. PZT thick film was fabricated by electrophoretic deposition of the resulted PZT powder onto the Pt substrate. The electrophoretic deposition process was conducted in an ethanol medium, and the effects of deposition parameters such as pH, applied voltage and deposition time on the film thickness were investigated. A green film with a maximum thickness of ~95 μm and sintered film with a maximum thickness of 80±2 μm were prepared. The effects of sintering atmosphere and temperatures on phase transformation and microstructures of PZT film were evaluated using X-ray diffraction and scanning electron microscopy. At room temperature, a PZT film of 68 ± 2 μm thickness has a relative permittivity of 477 ± 13 and ~ 9,500 at TC = 405oC, showing typical dielectric properties.

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Dielectric and structural analysis of hexagonal and tetragonal phase BaTiO3

Cited by 26 publications

References 11 publications

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

Simulation and Optimization of FAPbI3 Perovskite Solar Cells with a BaTiO3 Layer for Efficiency Enhancement

Fabrication of PZT Thick Film by Electrophoretic Deposition on the Platinum Substrate

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