Dielectric behavior of amorphous thin films of Se–Te–Sn-Ge system

Pal, Shweta; Mehta, N.; Fouad, S.S.; Atyia, H.E.

doi:10.1016/j.solidstatesciences.2020.106289

Cited by 11 publications

(2 citation statements)

References 31 publications

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“…A single-polaron hop and thermal excitation of the D− and D+ states at higher temperatures produce a neutral D°state. (In the other wards, the dominating mechanism is an electron hopping through D 0 to D + and a hole hopping through D + to D) [41,42]. Figure 6 shows the influence of changing frequencies on the computed ∆E .…”

Section: Acmentioning

confidence: 99%

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Mohamed,

Atyia

2024

Phys. Scr.

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The current research investigates the conductivity σ AC of glassy As4Ge24Te72 thin films through a combined experimental and theoretical approach. It sheds light on the complex relationship between σ AC , frequency, temperature, and film thickness. Analysis reveals that σ AC follows ω r law and exhibits hopping behavior. To effectively model and predict σ AC , an adaptive neuro-fuzzy inference system (ANFIS) is utilized. The ANFIS model successfully simulates the experimental data, showing high accuracy. Additionally, the prediction of experimentally measured values of σ AC is processed as a testing step and provides acceptable results. That enables ANFIS to enlarge the scale and complete the missing parts in the trained datasets by predictions for unmeasured σ AC values. The ANFIS network was built using MATLAB-R2017a. It consists of two inputs (frequency and temperature) and one output (AC conductivity). The precision is confirmed by calculating the modeling errors across the training process. The mean absolute errors MAE through the modeling process are not exceeding 10 − 5 . This average error value demonstrates the model’s effective ability. The alignment between experimental and ANFIS modeling results open up exciting possibilities for future research. By predicting the properties of the understudy material using ANFIS model, we can pave the way for more compact and efficient electrical devices.

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Section: Acmentioning

confidence: 99%

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Mohamed,

Atyia

2024

Phys. Scr.

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“…It is important to note that in the region between the diffraction angles 23°and 35°, all films showed a distinct hump. All the film samples have been deposited on the glass substrate, resulting in the hump present in the diffractograms [21,23,24].…”

Section: Structural and Compositional Identificationsmentioning

confidence: 99%

Optical and dispersion studies of thin S35-xGe15SnxTe50 films: Assessment of some physical parameters of samples

Hassanien

Sharma²,

Sharma³

2023

Phys. Scr.

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This article presents a study on the optical and dispersion characteristics of a group of thin films with exciting potential for optical applications. Thermally evaporated a-S35-xGe15SnxTe50 thin films (SGST) where x ranges from 0 to 10 at.% have been investigated. XRD, EDX, and FE-SEM techniques are utilized to examine the samples' physical properties. Meanwhile, optical characteristics are studied in the 300–2500 nm region through transmission and reflection measurements. Experimental and theoretical methods were employed to determine the optical bandgap energies (Eg), indicating that the films' electronic transition is indirectly allowed. The Eg-values decreased as Sn-content increased, reaching a range of 1.031eV to 1.301eV, while the refractive index increased from 2.513 to 2.741. In addition, the Wemple-Di-Domenico model was used to determine the dispersion parameters (Eo and Ed), and it is found that these energies decreased as Sn-content increased, with values ranging from 2.014 eV to 2.672 eV for Eo, and from 13.009 eV to 15.334 eV for Ed. Other important parameters, such as the average heat of atomization, total mean bond energy, and deviation from stoichiometry, are also calculated and discussed. The results of this investigation suggest that SGST samples could be used in various optical applications and provide a basis for further research and innovation in this exciting field.

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Assessing, surface morphology, optical, and electrical performance of ZnO thin film using ALD technique

et al. 2023

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Dielectric behavior of amorphous thin films of Se–Te–Sn-Ge system

Cited by 11 publications

References 31 publications

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Predicting the AC conductivity of semiconductor composition thin films using ANFIS model; an integrated experimental and theoretical approach

Optical and dispersion studies of thin S35-xGe15SnxTe50 films: Assessment of some physical parameters of samples

Assessing, surface morphology, optical, and electrical performance of ZnO thin film using ALD technique

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