Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. The electrical characteristics of pentacene-based organic thin film transistors ͑OTFTs͒ using poly͑methyl methacrylate͒ ͑PMMA͒ as the gate dielectric are reported. Uniform pinhole-free and crack-free films of PMMA could be obtained by spin coating, with a lower limit of thickness of about 150 nm. The effects of the insulator thickness and channel dimensions on the performance of the devices have been investigated. Leakage currents, which are present in many polymeric gate dielectrics, were reduced by patterning the pentacene active layer. The resulting devices exhibited minimal hysteresis in their output and transfer characteristics. Optimized OTFT structures possessed a field-effect mobility of 0.33 cm 2 V −1 s −1 , a threshold voltage of Ϫ4 V, a subthreshold slope of 1.5 V/decade, and an on/off current ratio of 1.2ϫ 10 6 .