Dielectric constant of ultrathinSiO2film estimated from the Auger parameter

Abstract

The dielectric constant of ultrathin ͑0.55-7.96 nm͒ SiO 2 films formed on a Si͑001͒ substrate was characterized in terms of the modified Auger parameter of Si atoms, ␣ Si Ј . The ␣ Si Ј was found to be as much as 0.7 eV higher for an ultrathin ͑0.68 nm͒ SiO 2 film than for thick SiO 2 films. From the observed oxide thickness dependence of ␣ Si Ј , the of ultrathin SiO 2 films was estimated by calculating the change in the polarization energy and the change in the electrostatic screening energy originating from dielectric discontinuity at the SiO 2 /Si interface. The of ultrathin ͑0.68 -2.13 nm͒ SiO 2 films was identical to that of bulk SiO 2 within Ϯ1%.

Structural ordering of ultra-thin, amorphous aluminium-oxide films

“…1, in spite of the gradual transition of the developing oxide films from amorphous Al-oxide to crystalline c-Al 2 O 3 with increasing oxidation temperature (T) and film thickness (d) [1,5,6] [11,12]. Further, the approximately constant value of a 0 Al for increasing oxide-film thickness indicates that the dielectric discontinuity at the metal/oxide interface, as reported for thin SiO 2 films on Si substrates [21][22][23], does not play a significant role here. For example, for increasing SiO 2 film thickness from 0.5 to 2.5 nm, an associated decrease in the relative value of a 0 Si (i.e.…”

“…The BE values of the resolved Al 2p and O 1s oxide-film main peaks, as well as the KE values of the corresponding Al KL 23 Tables 1 and 2 for the various oxidation times Table 1 Binding energies (BE) of Al 2p oxide-film main peaks, and the kinetic energies (KE) of the corresponding Al KL 23 L 23 main peaks, as resolved from the measured XPS spectra of the Al substrate after oxidation for various oxidation temperatures (T) and times (t) The corresponding values for the aluminium modified Auger parameter (a 0 Al ) are also given. The numbers in the first column refer to the labels of the corresponding data points in Figs.…”

“…[20]). For the case of a thin oxide film on a metal substrate, an additional contribution to R ea may arise due to the dielectric discontinuities at the substrate/oxide and oxide/ vacuum interfaces (as expressed by the change in electrostatic screening energy of the core-hole when going from the substrate/oxide interface to the oxide/vacuum interface) [20][21][22][23]. Table 1).…”

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

“…This difference can be regarded as the difference in the dielectric constant of the interface layer because the energy difference between the Si 2p level and Si 1s level depends on the dielectric constant of the interface layer. 37 In our previous report, 20,29 we have pointed out that, in the case of the Si face, the energy difference in the valence-band edge corresponds to N it . This correspondence is found to be valid for both the Si and C faces.…”

Photonic band structure of oxidized macroporous silicon

“…The silicon surface usually contains the native oxide layer with the thickness of the order of a few nanometers and dielectric constant that does not differ from the bulk silica [10]. Thus, in some cases, especially for the structures with small lattice pitch (a < 1 ìm), a correction for existence of the native oxide layer should be taken into consideration.…”