Dielectric data of ceramic substrates at high frequencies

Forsterite-based ceramic–glass composites for substrate applications in microwave and millimeter wave communications

“…3. The Mg 2 SiO 4 has theoretical density of 3.24 g/cm 3 . The lower density shown by all samples which were sintered below 950 • C due to the fact that the glass phase of these compositions was too viscous to penetrate the voids between Mg 2 SiO 4 particles.…”

“…The important characteristics required for a packaging material are: (i) low dielectric constant ε r < 10 (to increase the signal speed), (ii) low dielectric loss or high quality factor (to increase selectivity), (iii) high thermal conductivity (to dissipate the heat generated), (iv) low or matching coefficient of thermal expansion to that of the materials attached to it, and (v) low temperature coefficient of resonant frequency τ f [2][3][4][5][6][7]. Rapid progress continues to be made towards achieving high speed and high frequency processing of electronic devices, requiring the electronic components and devices to have ever higher processing speed and high integration density.…”

Fabrication of nanopowders by high energy ball milling and low temperature sintering of Mg2SiO4 microwave dielectrics

“…These applications demand microwave substrate materials with high quality factor (Q × f) to achieve high selectivity, low dielectric constant (ε r ) to reduce the delay time of electronic signal, and nearly zero temperature coefficient of resonant frequency ( f ) for frequency stability. Promising candidates include as Mg 2 SiO 4 (Q × f = 40,000-240,000 GHz, ε r = 6-7, f = −60 ppm/ • C) [1,2], Al 2 O 3 (Q × f = 680,000 GHz, ε r = 10, [3,19], Mg 2 SnO 4 (Q × f = 55,100 GHz, ε r = 8.41, f = −62 ppm/ • C) [11], Ba(Zn 1/3 Ta 2/3 )O 3 (Q × f = 120 THz) [23], Li 2 MgTi 3 O 8 (Q × f = 36,200 GHz, ε r = 26, f = −2 ppm/ • C) [24] and other microwave dielectrics materials [25][26][27][28][29][30][31][32][33]. Among these materials, forsterite Mg 2 SiO 4 has attracted a great attention with low dielectric constant and loss tangent.…”

Synthesis and Microwave Dielectric Properties of Zn3B2O6 Ceramics for Substrate Application

“…In addition, the microwave dielectric materials are required to have high quality value (low loss tangent) and a near‐zero temperature coefficient of resonant frequency. The microwave dielectric ceramics used for LTCC technology must be chemically compatible with the conducting electrode materials, such as silver, copper etc., and possess a lower sintering temperature than the melting points of Ag or Cu (960°C and 1083°C, respectively) …”