Dielectric enhancement of BaSrTi1.1O3/BaSrTi1.05O3/BaSrTiO3 multilayer thin films prepared by RF magnetron sputtering

Xu, Zunping; Yan, Dongxu; Xiao, Dingquan; Yu, Ping; Zhu, Jianguo

doi:10.1016/j.ceramint.2012.08.006

Cited by 34 publications

(15 citation statements)

References 14 publications

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“…Using (ε BZT /ε BST )<1 in eq (3) demonstrates that the effective dielectric constant, ε eff lies between the dielectric constant of individual multi layers BST and BZT thin films i.e., ε BST >ε eff >ε BZT . Similar results were reported for compositionally graded multilayer thin films [6]. The electric field dependence of dielectric constant of the bilayer structure shown in Fig.…”

Section: Dielectric Propertiessupporting

confidence: 88%

“…3. The contribution of dielectric constant corresponding to BST/BZT multi-layer structure is not only due to the contribution as predicted by Maxwell-Wagner model [6], but also from other contributions such as strain induced polarization, mismatch of lattice parameters of individual layers [29][30] and the contribution of co-existent phases present in the morphotropic phase boundary composition corresponding to BZT thin films [25]. The effective capacitance of a multilayer structure can be obtained by considering the capacitances of all constituent thin films.…”

Section: Dielectric Propertiesmentioning

confidence: 88%

“…Electric field (kV/cm) [6] and ascribed to stress between different layers caused by lattice mismatch, which is often discussed in super-lattice structures [35]. Layered structures have a strong influence on the electric field distribution.…”

Section: Capacitance (F)mentioning

confidence: 99%

“…Pulsed laser deposition (PLD) is the most preferred method for deposition of ferroelectric multilayered thin films and superlattices to maintain stoichiometry. Bilayer thin film structures consisting of one layer as BST (a paraelectric composition) and another layer of (Ba 1-x Sr x )TiO 3 with composition gradient [6][7][8], multiferroic [9], ferroelectric [10][11], non-ferroelectric [12][13], conducting perovskite [12,[14][15], doped multilayers of BST thin films [16] have been reported. Another interesting sandwich structure of ferroelectric thin films gained much attention due to improved electrical properties [10,[17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Mahesh

Pal

Prasad

et al. 2021

Preprint

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Multilayer thin films of (Ba0.50Sr0.50)TiO3 (BST) and Ba(Zr0.15Ti0.85)O3 (BZT) were designed and grown using Pulsed LASER Deposition technology. The periodic (BST/BZT)n thin films were deposited on Pt‹111›/SiO2/Si substrates. X-ray diﬀraction reveals the presence of a polycrystalline, perovskite structure corresponding to the bilayer thin film stacks. SEM analysis confirmed the multilayer structure without any interdiffusion across layers. It was also found that the dielectric and ferroelectric properties of the thin films are strongly influenced by the periodic hetero-structures. The thin film stacks exhibit significantly higher tunabilities, comparable with multilayer thin films grown on various single crystal substrates such as LaAlO3, MgO and SrTiO3. Possible mechanisms explaining the other observed attributes such as lower dielectric loss resulting in higher Figure of Merit (FoM), low leakage current are discussed. The effect of incorporating a comparatively lower permittivity thin film in the multilayer stacks is presented. The observed properties of such multilayer structured films help in realization of low loss and highly tunable applications.

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Section: Dielectric Propertiessupporting

confidence: 88%

Section: Dielectric Propertiesmentioning

confidence: 88%

Section: Capacitance (F)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Mahesh

Pal

Prasad

et al. 2021

Preprint

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“…The FOM of BMN–BST composite thin films is ~88. According to the above results, the figures of merits four PCBLs and BMN–BST composite thin films are higher than that of the SiN/BST, MgO/BST, BZN/BST, and BaSrTi 1.1 O 3 /BaSrTi 1.05 O 3 /BaSrTiO 3 thin films.…”

Section: Resultsmentioning

confidence: 73%

Investigation on Tunable Performance of BMN/BST Multilayer and BMN–BST Composite Thin Films

Zhang

et al. 2014

J. Am. Ceram. Soc.

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The BMN/BST multilayer and BMN-BST composite thin films have been fabricated by pulsed laser deposition on Au/ TiO x /SiO 2 /Si substrate. The multilayer thin films comprising one, two, and four periodic compositional Bi 1.5 MgNb 1.5 O 7 / Ba 0.6 Sr 0.4 TiO 3 (BMN/BST) layers (PCBLs) have been elaborated with the final same thickness. The four PCBLs show the largest dielectric constant of~168 and tunability of 40.6% at a maximum applied bias field of 0.67 MV/cm and the lowest loss tangent of~0.006, whereas the figure of merit (FOM) is 72. The BMN-BST composite thin films exhibit medium dielectric constant of~238, low loss tangent of~0.0053, and superior tunable dielectric properties at room temperature. Calculations of tunability and FOM display a maximum value of 49.3% at 670 kV/cm and~88, respectively.

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Optimized Tunability of Barium Strontium Titanate Thin Films onto Different Plates with Proper Buffer Layers

Dong

Liang

Hui

et al. 2022

Physica Status Solidi (b)

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Misfit strain, polarization, permittivity, and tunability of Ba x Sr1−x TiO3 (BST) thin films on various substrates with varied buffer layers are calculated by a modified thermodynamic model. The lattice parameters of the LaAlO3 (LAO), CaTiO3 (CT), BaZr0.25Ti0.75O3 (BZT), and MgO buffer layers grow consecutively as does the thermal expansion coefficient (TEC) of the Si, Ti, Ni, and stainless steel (SS) substrates. When the TEC of substrates is bigger (such as Ni, SS) than that of the films, introducing buffer layers with larger lattice parameters (such as BZT, MgO) can improve the permittivity and tunability. Conversely, inserting buffer layers with smaller lattice parameters (such as LAO, CT) can enhance the dielectric response when the TEC of substrates is smaller (such as Si, Ti) than that of the films. The relationship between the TEC of substrate and the lattice parameter of buffer layer is primarily linear for achieving high tunability. According to several references, introducing LaNiO3 buffer layers can significantly increase the tunability of BST solid solutions prepared on Si‐based substrates, which is in line with the estimated rule. This law offers a guide for choosing the best substrate and buffer layer when producing BST films with strong dielectric response.

show abstract

Dielectric enhancement of BaSrTi1.1O3/BaSrTi1.05O3/BaSrTiO3 multilayer thin films prepared by RF magnetron sputtering

Cited by 34 publications

References 14 publications

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Investigation on Tunable Performance of BMN/BST Multilayer and BMN–BST Composite Thin Films

Optimized Tunability of Barium Strontium Titanate Thin Films onto Different Plates with Proper Buffer Layers

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