Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

Abstract

In this work we investigate electron-impurity binding energy in GaN/HfO2 quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron-impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron-impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO2 with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.

Calculation of Intradonor Normalized Transition Energy in Spherical Quantum Dots Made of Different Materials

“…It is seen that this situation significantly changes the electronic states of the structure. [ 39,40 ]…”

“…It is seen that this situation significantly changes the electronic states of the structure. [39,40] In the literature, there are many studies on binding energy and transition energy calculations for different structures. [12,[41][42][43] One of the most important reasons for calculating the binding energy and transition energy is that it is of great importance in determining the optical properties of the system.…”

Effects of Dielectric Screening Function and Image Charges on Hydrogenic Donor Binding Energy in a Surface Quantum Well

“…Shallow impurity states in a freestanding semiconductor nanowire and in a semiconductor nanowire surrounded by a metallic gate have been studied by Li et al 12 The effects of dielectric mismatch on the binding energies of impurity in GaAs-Ga 1-x Al x As quantum wells have been studied by Deng et al 13 Pereira et al 14 have investigated the electron-impurity binding energy in GaN/HfO 2 quantum wells considering simultaneously all energy contributions caused by the dielectric mismatch.…”