2023
DOI: 10.1109/tnb.2022.3172553
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Dielectric Modulated Nanotube Tunnel Field-Effect Transistor as a Label Free Biosensor: Proposal and Investigation

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Cited by 25 publications
(11 citation statements)
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“…Also, it is clear that the selectivity of streptavidin (κ = 2.1) toward keratin (κ = 10), gelatin (κ = 12), and other proteins (κ = 24) is 1.05 × 10 5 , 2.35 × 10 5 and 1.52 × 10 6 which is 3, 6, and 39 times greater than the published literature. 29 A comparison of the selectivities of the proposed SG-DC-VTFET biosensor for various biomolecules with respect to reference is characterized in Fig. 11d.…”
Section: Resultsmentioning
confidence: 99%
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“…Also, it is clear that the selectivity of streptavidin (κ = 2.1) toward keratin (κ = 10), gelatin (κ = 12), and other proteins (κ = 24) is 1.05 × 10 5 , 2.35 × 10 5 and 1.52 × 10 6 which is 3, 6, and 39 times greater than the published literature. 29 A comparison of the selectivities of the proposed SG-DC-VTFET biosensor for various biomolecules with respect to reference is characterized in Fig. 11d.…”
Section: Resultsmentioning
confidence: 99%
“…In this article, a novel split-gate double-cavity vertical tunnel field-effect transistor (SG-DC-VTFET) biosensor that exhibits exceptional selectivity and sensitivity, enabling effective detection of the COVID-19 pandemic, is developed. The impact of different biomolecules (charged or uncharged) on various parameters, 29 including energy band, electric field, I DS , transconductance, and surface potential, is examined. The sensitivities corresponding to I DS , transconductance, electric field, and surface potential are also investigated.…”
Section: Discussionmentioning
confidence: 99%
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“…Low I on values of 10 –17 to 10 –18 A are observed for the proposed GE-HTFET biosensor with air-filled nano-gap [ 13 , 24 ]. For such FET-based biosensors, the signal-to-noise ratio (SNR) would be limited during practical applications [ 25 ].
Fig.
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Section: Resultsmentioning
confidence: 99%
“…The other devices like GAA-NWTFET, DGHG-FET, FinFET, Nanotube, TFET etc. [1][2][3][4][5][6][7][8] are recommended to minimize the SCEs and discover different way to examine lower off-current (I OFF ), power and reduced subthreshold-slope (SS) less than 60 mV/decade. From all the previous reported FETs based devices, TFET shows the required low SS and I OFF which is mostly preferred.…”
mentioning
confidence: 99%