Dielectric Properties and Applications of Nanocrystalline Diamond Thin Films

Govindaraju, N.; Singh, Rajeev

doi:10.1002/9781119183860.ch15

Cited by 1 publication

(1 citation statement)

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“…Given that conduction does not occur in the intrinsic diamond grains, and instead wholly in the grain boundaries, it is clear that an effective dielectric constant for this region must be used. Values for the dielectric constant of N-UNCD in the literature are not commonly found, though values for microcrystalline diamond as high as r = 60.3, and nanocrystalline diamond as high as r = 3003 have been reported 37 . In addition, it has been shown previously that granular materials exhibiting hopping conduction in the vicinity of a metal-to-insulator transition undergo a divergence of the dielectric constant 38 .…”

Section: Discussion and Analysismentioning

confidence: 96%

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

et al. 2020

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We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of 3D weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as function of temperature, which shows evidence of a power law dependence in good agreement with theory.Electrical measurements were performed on N-UNCD films grown by chemical vapour deposition. These films arXiv:2003.05077v1 [cond-mat.mes-hall]

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Section: Discussion and Analysismentioning

confidence: 96%