Dielectric properties and tunability of cubic pyrochlore Bi1.5MgNb1.5O7 thin films

Abstract

The Bi1.5MgNb1.5O7 thin films with cubic pyrochlore structure were prepared onto Pt-coated sapphire substrates by rf magnetron sputtering deposition from a stoichiometric target. Dielectric measurements indicated that the Bi1.5MgNb1.5O7 thin films exhibited low dielectric loss of ∼0.0018–0.004, medium dielectric constant of ∼86, and superior tunable dielectric properties at room temperature. A bias field of 1.6 MV/cm resulted in the maximum voltage tunability of 39%. A brief discussion is given on the enhanced tunability compared to Bi1.5ZnNb1.5O7 thin films. The low loss and superior tunability make Bi1.5MgNb1.5O7 thin films promising for potential tunable capacitor applications.

Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

“…4a, all the BMNT thin films shows low tangent loss (lower than 0.01) except the BMNT thin films prepared at 100 W. The tangent loss of BMNT thin films have little variation with the electric field at first, and then increase obviously with the field, which is probably caused by leakage loss at high electric field [19]. Similar behavior has been observed by Jiang et al [12]. The dielectric constant of BMNT thin films decrease evidently with the electric field.…”

“…It was reported that the Bi 1.5 MgNb 1.5 O 7 (BMN) thin films exhibited impressive tunable properties and low dielectric loss [12,13]. Furthermore, research shows that the introducing of highly polarizable Ti 4?…”

Effect of oxygen pressure on preferential orientation, microstructure and functional properties of Bi1.5MgNb1.5O7 thin films prepared by pulsed laser deposition

“…In addition, the tunability as high as 39% has been observed for BMN thin films at room temperature [12]. These excellent dielectric properties make BMN an attractive material for tunable device applications.…”

Synthesis, structure and electrical properties of Mg-, Ni-codoped bismuth niobates

“…The most attention has been paid to the Zn-, Mg-containing bismuth niobates, which possess high dielectric constant (170-180) and low dielectric loss (~10 -4 ) at 1 MHz (at room temperature) [1][2][3][4][5][6][7][8][9]. To search for the same properties Fe- [10], Mn- [11][12], Co- [13], Ni- [12,[14][15], Cu- [12] and the mixed Zn-M (M -Sr [16], Ca [16][17], Mn [16,18], Ti [19][20][21][22], Sn [19,22], Zr [19,[21][22], Ce [19,22], Gd [21], Ta [23], La [24]), Mg-M (M -Sr [25], Nd [26], Cu [27]) bismuth niobates and other ones were synthesized.…”