Dielectric properties of A-site Mn-doped bismuth sodium titanate perovskite: (Bi0·5Na0.5)0.9Mn0·1TiO3

Structural, electrical, and dielectric study of the influence of 3.4% lanthanide (Ln3+ = Sm3+ and La3+) insertion in the A-site of perovskite Ba0.95Ln0.034Ti0.99Zr0.01O3

“…The peaks observed in the impedance and modulus plot confirm the presence of distinct conduction mechanisms. 95 Similarly, two peaks were observed in the modulus plot while only one peak is observed in the spectroscopic impedance plot (see Fig. 17(b) ).…”

“…Moreover, the high-frequency oscillation corresponding to the short-range mobility is larger compared to that of the low frequency. 86,92–95…”

“…Moreover, the high-frequency oscillation corresponding to the short-range mobility is larger compared to that of the low frequency. 86,[92][93][94][95] The existence of a stretching coefficient parameter (b) is conrmed by the asymmetric broadening of the relaxation peaks (M 00 max ), this parameter allowing to determine the type of relaxation process in the ceramic (Debye or non-Debye) either for the grains or for the grain boundaries. 86 The modeled Kohlrausch-Williams Watts (KWW) function proposed by Bergma is used to calculate this coefficient (b), the modied notation of this function is presented as follows: 96…”

“…The comparison of dielectric loss, imaginary impedance and imaginary modulus diagrams is very important to separate grain and grain boundary effects and/or to differentiate at the microscopic scale the process responsible for the localized dielectric relaxation and the long range conduction mechanism. 95,97 Fig. 17(a) shows the variation of dielectric loss as a function of frequency for BZT, BSmZT and BLaZT respectively at T = 350 °C.…”

Wide-Band-Gap p-Type GaCrO3:Ni Semiconductor: A Hole Transport Material

“…In the present work, each arc (corresponds to grain and grain boundaries) of the impedance spectrum is modeled to an equivalent circuit of a parallel combination of CPE and the resistor. − Both the equivalent circuits, related to grain and grain boundaries, are connected in series. Fitting of the equivalent QC circuit is shown in the inset of Figure for each sample at one arbitrary temperature.…”