Dielectric properties of amorphous Bi–Ti–O thin films

Abstract

We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of [Formula: see text], amorphous Bi[Formula: see text]Ti[Formula: see text]O[Formula: see text] exhibits excellent dielectric properties, with a high dielectric constant, [Formula: see text] [Formula: see text] 53, and a dissipation factor as low as tan [Formula: see text]. The corresponding maximum breakdown field reaches [Formula: see text]1.6[Formula: see text]MV/cm, yielding a maximum stored charge per unit area of up to 8 [Formula: see text]C/cm2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.