Dielectric Properties of (Ba, Sr)TiO₃ Thin Films Deposited by RF Sputtering

Abstract

Thin films of (Ba0.65Sr0.35)TiO3 (BST) have been prepared by an rf-sputtering method at substrate temperatures of 500 to 700°C. The dielectric constant of these films ranges from 190 to 700 at room temperature. This value changes with the grain size rather than the film thickness. The dielectric constant of about 300 and leakage current density of about 1×10-8 A/cm2 are obtained in the 65-nm-thick film deposited at a substrate temperature of 600°C. This shows the BST film can be applied to dielectrics of dynamic random access memory (DRAM) capacitors.

Systematic investigation of the annealing temperature and composition effects on the dielectric properties of sol–gel BaxSr1−xTiO3 thin films

“…BST thin films can be prepared by several techniques such as MOCVD, RF-magnetron sputtering, pulsed laser ablation and sol-gel processes [1][2][3][4]. Among these techniques, sol-gel deposition is of a great industrial interest, using simple equipment and fast process.…”

NiTiO3 powders obtained by polymeric precursor method: Synthesis and characterization

“…It is known that metal acetates as well as metal alkoxides are easily dissolved in mixed solvents such as ethanol, ethylene glycol and 2-methoxy ethanol [5]. Several preparation methods have been reported in literature to synthesize nanocrystalline pyrochloretype powders, such as: solid-state reaction [6], propionic acid routes [7], malate [8] coprecipitation [9], sol-gel [10], modified Pechini [11] and citrate [12].…”

Physical and chemical characterization of barium strontium titanate thin films

“…A direct relationship between BST grain size and dielectric constant has been reported by several authors (6)(7)(8), therefore BST film grain size was the focus of many studies. Shown in Fig.…”