Dielectric properties of Er2O3 films

Dutta, Chiranjit; Barua, K.

doi:10.1016/0040-6090(83)90470-4

Cited by 24 publications

(10 citation statements)

References 8 publications

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“…1,2 Recently, gadolinium oxide has been studied 3,4 as an alternative gate dielectric to replace SiO 2 in the complementary metaloxide-semiconductor (CMOS) devices for the sub-100-nm generation of silicon technology. 1,2 Recently, gadolinium oxide has been studied 3,4 as an alternative gate dielectric to replace SiO 2 in the complementary metaloxide-semiconductor (CMOS) devices for the sub-100-nm generation of silicon technology.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition

Singh

Thakur

Shalini

et al. 2004

Journal of Applied Physics

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We report the growth and characterization of gadolinium oxide films deposited on Si͑100͒ and fused quartz in the temperature range of 450-800°C by a low-pressure metalorganic chemical vapor deposition technique using a ␤-diketonate complex of gadolinium as the precursor. The x-ray diffractometry study of the films reveals that, irrespective of the growth temperature, the films grown on fused quartz (i.e., an amorphous substrate) and silicon (i.e., a single-crystal substrate) comprise the cubic Gd 2 O 3 phase with a (111) texture. However, the films grown on fused quartz at higher temperatures also show the presence of the monoclinic phase of Gd 2 O 3 . The growth of strongly oriented films on fused quartz has been understood on the basis of minimization of the surface energy. The scanning electron microscopy and atomic force microscopy studies reveal that the films grown at or above 525°C are densely packed and grainy. Optical properties of the films, as studied by ultraviolet (UV)-visible spectrophotometry and Fourier transform infrared spectroscopy, are found to depend strongly on the chemical vapor deposition condition. The analyses reveal further that the films grown at or above 500°C are free of heteroatoms, i.e., C, N, and H. The optical band gap of the films is in the range of 5.0-5.4 eV. Electrical characterization was carried out on Al/ Gd 2 O 3 / Si metal-insulator-semiconductor structures by capacitance-voltage ͑C -V͒ and current-voltage analyses. The effective dielectric constant of the films was in the range of 7-23. The bidirectional C -V characteristics show a counterclockwise hysteresis due to the presence of slow interface traps. A minimum leakage current of 4.6ϫ 10 -5 A/cm 2 at the 1-MV/ cm field was demonstrated.

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Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition

Singh

Thakur

Shalini

et al. 2004

Journal of Applied Physics

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“…Equation (1) reveals that the series capacitance (C,) decreases as R increases and from (2) it is clear that tan dmin decreases as R increases. Similarly (3) shows that wmin decreases as R increases. These results clearly indicate the shift of tan dmin towards the lower-frequency region as the number of annealing cycles increases.…”

Section: "mentioning

confidence: 78%

“…Though the higher-frequency ( > 15 kHz) dependence of the conduction is accompanied by the lead and electrode effects, in the present case the effects of electrodes are minimized to the maximum possible level by the thick aluminium deposits. (1) As-deposited film, (2) after stabilization, (3) at 483 K. o Measured, corrected for electrode resistance At room temperature the electrode effects were found to be negligible ( Fig. 5).…”

Section: Ac Conductancementioning

confidence: 99%

Structure and Electrical Properties of Thermally Evaporated Nd2O3 Thin Films

Kannan

Narayandass

Balasubramanian

et al. 1991

Phys. Stat. Sol. (a)

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Structure and electrical properties of thermally evaporated neodymium oxide thin films are studied. From the XRD technique the structure of the deposited film (265 nm) is found to be of crystalline nature. However, films of lower thicknesses are found to possess amorphous structure. The loss peak minimum (tan δmin), observed in the frequency‐loss factor plot, is found to shift to the lower frequency region as the number of annealing cycles increases and the results are discussed. The ac conduction property of these films with aluminium electrodes forming a MIM sandwich structure is studied at different frequencies and temperatures. Two activation energies for the conduction process are also estimated and the results are discussed.

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“…e decreases with increase of fat all temperatures, but this variation is less pronounced as the temperature decreases. This is ascribed to an interfacial polarization caused by space charge and microscopic field distortion (Dutta and Barua 1983).…”

Section: Resultsmentioning

confidence: 99%

Dielectric properties of Fe(OH)3 thin films formed at solution-gas interface

Nikam¹,

Pathan²

1994

Bull. Mater. Sci.

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Al~traet. Dielectric properties of solution-gas interface-formed Fe(OH)3 thin-film capacitors (AI/Fe(OH)3/AI) of various thicknesses have been studied in the frequency range 10-106 Hz at various temperatures (300-443K). Dielectric constant, ~, increases with increasing film thickness (d) and temperature (T) and decreases with increase of frequency (f). The loss factor (tan 6), showing pronounced minimum with frequency, increases with rise of temperature, and tan 6m~" shifts to a higher frequency. 'The large increase in dielectric constant towards low frequency region indicates the possibility of an interfa¢ial polarization mechanism in this region.

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Dielectric properties of Er2O3 films

Cited by 24 publications

References 8 publications

Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition

Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition

Structure and Electrical Properties of Thermally Evaporated Nd2O3 Thin Films

Dielectric properties of Fe(OH)3 thin films formed at solution-gas interface

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