1998
DOI: 10.1143/jjap.37.5645
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Dielectric Properties of PbTiO3Thin Films on CeO2/Si(100) and Y2O3/Si(100)

Abstract: Recent developments in the modelling of the dark matter distribution in our Galaxy point out the necessity to consider some physical processes to satisfy observational data. In particular, models with adiabatic compression, which include the effect of the baryonic gas in the halo, increase significantly the dark matter density in the central region of the Milky Way. On the other hand, the non-universality in the scalar and gaugino sectors of supergravity models can also increase significantly the neutralino an… Show more

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Cited by 23 publications
(9 citation statements)
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“…Various deposition methods, such as MBE, PLD, chemical vapor deposition (CVD), and sputtering, have been exploited to achieve highquality epitaxial thin films. [285][286][287][288][289] The majority of these studies employ [001]-oriented SrTiO 3 substrates. On SrTiO 3 (001), PbTiO 3 adatoms exhibit ideal 2D layer-by-layer growth 290 or even step-flow growth 291 to form atomically flat surfaces and interfaces.…”
Section: Batiomentioning
confidence: 99%
“…Various deposition methods, such as MBE, PLD, chemical vapor deposition (CVD), and sputtering, have been exploited to achieve highquality epitaxial thin films. [285][286][287][288][289] The majority of these studies employ [001]-oriented SrTiO 3 substrates. On SrTiO 3 (001), PbTiO 3 adatoms exhibit ideal 2D layer-by-layer growth 290 or even step-flow growth 291 to form atomically flat surfaces and interfaces.…”
Section: Batiomentioning
confidence: 99%
“…From the standpoint of serving as the dielectric in MOS structures, ceria's high dielectric constant (ε r ≈ 25) allows for the growth of significantly thicker films than that required for SiO 2 . Lastly, CeO 2 thin films are effective as buffer layers and diffusion barriers between the Si substrate and many complex and chemically reactive compounds, such as Pb(Zr,Ti)O 3 and PbTiO 3 [8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…By increasing oxygen pressure, both the CeO 2 (111) and CeO 2 (200) peaks were observed, which can be explained as follows: The CeO 2 (111) plane has cerium and oxygen atoms together while the CeO 2 (200) planes have Ce atoms only. The substrate is more easily oxidized at higher O 2 pressure, and the CeO 2 (200) plane with only Ce atoms is more easily deposited on the substrate, due to the tendency of Ce atoms to combine with oxygen atoms 11–14…”
Section: Resultsmentioning
confidence: 99%