Dielectric properties of pyroactivated SiO2 films

Korzo, V.F.; Lyashchenko, G. A.; Kireev, P. S.

doi:10.1007/bf00817854

Cited by 1 publication

(3 citation statements)

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“…thermally grown (8) and pyrolytically deposited SiO2 films (9), and the switching from one state to another was linked to the presence of certain impurities in the oxide. Finally, conduction through high-purity SiO., has been demonstrated to occur via a Fowler-Nordhelm tunneling mechanism (1)(2).…”

Section: Introductionmentioning

confidence: 99%

“…Considerable work has been done to establish the conditions which reduce defect concentrations and thereby maximize the dielectric strength. The effects of oxide thickness (2,3,(5)(6)(7)(8)(9)(10)(11), substrate doping (3,4,6), reactivity of the metal electrode (2), postmetalization annealing (2), passivating layers (2), and temperature (3,9) have been examined, but, unfortunately, the results have not always been in agreement. For instance, it has been reported that SiO2 breakdown strengths increase (2), decrease (3,(5)(6)(7)(8)(9), or are constant (10) as the oxide thickness is increased.…”

mentioning

confidence: 99%

“…The effects of oxide thickness (2,3,(5)(6)(7)(8)(9)(10)(11), substrate doping (3,4,6), reactivity of the metal electrode (2), postmetalization annealing (2), passivating layers (2), and temperature (3,9) have been examined, but, unfortunately, the results have not always been in agreement. For instance, it has been reported that SiO2 breakdown strengths increase (2), decrease (3,(5)(6)(7)(8)(9), or are constant (10) as the oxide thickness is increased. One common problem of many past studies is that breakdown measuring conditions have not been well defined; as a consequence, defectrelated breakdowns have obfuscated the results of investigations made to determine the thickness and temperature dependence of the maximum breakdown strength, and the occurrence of undetected self-healing events has distorted statistical breakdown characteristics.…”

mentioning

confidence: 99%

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Dielectric Breakdown in Silicon Dioxide Films on Silicon

Osburn

Ormond

1972

J. Electrochem. Soc.

115

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The breakdown characteristics of thermally grown SiO2 films on Si are shown to depend on oxide thickness, substrate doping concentration, sample preparation, presence of passivating layers, and testing temperatures. The maximum breakdown strength varies as [thickness]−0.21 below 800Aå, is essentially constant from 1000 to 2000Aå, and increases slightly (8%) with increasing testing temperature in the range −196° to +300°C. The breakdown strength is only moderately affected by the dopant‐type level in the starting silicon wafer: 1020 phosphorus atoms/cm3 in the silicon reduced the breakdown strength in 200Aå thick oxides by only 20%. The initial condition of the silicon wafer, cleaning procedure, oxidation temperature, passivation layer, and postmetalization anneal are important parameters in the control of defect‐related, low‐field breakdowns, while the oxidation ambient, substrate doping, oxide thickness, metalization, and measuring temperature have little or no influence on this process.

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