2019
DOI: 10.1016/j.ceramint.2019.02.171
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Dielectric properties of the bulk and interfacial layers in ferroelectric BaZr0.2Ti0.8O3 thin films

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Cited by 9 publications
(3 citation statements)
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“…Strains were imparted into the BZT films through differences in lattice parameters and thermal expansion behavior between the film and the underlying substrate. [18] The bulk rhombohe-dral structure was confirmed in the BZT polycrystalline ceramic with a lattice parameter ≈4.060 Å via XRD analysis. [10] We verified that the LAO, LSAT, and STO substrates have lattice parameters of ≈3.790 Å, ≈3.870 Å, and ≈3.905 Å, respectively.…”
Section: Resultsmentioning
confidence: 92%
“…Strains were imparted into the BZT films through differences in lattice parameters and thermal expansion behavior between the film and the underlying substrate. [18] The bulk rhombohe-dral structure was confirmed in the BZT polycrystalline ceramic with a lattice parameter ≈4.060 Å via XRD analysis. [10] We verified that the LAO, LSAT, and STO substrates have lattice parameters of ≈3.790 Å, ≈3.870 Å, and ≈3.905 Å, respectively.…”
Section: Resultsmentioning
confidence: 92%
“…Nano-hybridization has been studied intensively in many research fields [1][2][3][4][5][6] . Especially in thin film formation, nanohybridization has been achieved by design of the stacking structure.…”
Section: Introductionmentioning
confidence: 99%
“…Generally speaking, these thin film properties differ from those of the bulk materials [1][2][3] because of the crystal orientation, the lattice strain, and other characteristics [4][5][6] . Especially, lattice strain is a key factor to ascertain thin film properties.…”
Section: Introductionmentioning
confidence: 99%