Frequency and temperature dependences of dielectric permittivity and electric modulus of pure and Ba-doped Bi 2 Ti 4 O 11 were studied in the ranges of 10 Ϫ1 -10 6 Hz and Ϫ150-350°C, respectively. We found that the antiferroelectric phase transition temperature of Bi 2 Ti 4 O 11 decreases with Ba doping. In the permittivity studies, we also observed dielectric relaxation peaks shift to higher temperature with increasing frequency. Furthermore, in the electric modulus formalism, conducting peaks were uncovered above 150°C in addition to the dielectric relaxation peak. We discussed the mechanisms for the dielectric relaxation and conduction processes based on TiO 6 octahedra distortion and a space-charge model.