Dielectric properties of the semiconducting compounds Cd[sub 1−x]Fe[sub x]Te

Żukowski, P.; Partyka, J.; Węgierek, P.; Sidorenko, J.; Szostak, Jolanta; Rodzik, A.

doi:10.1134/1.1187887

Cited by 5 publications

(2 citation statements)

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“…where τ 0 is numerical coefficient and ∆E is an activation energy of the relaxation time. The relaxation time is a function of the distance a jumping electron must cover [32]. The distances between the individual particles are also random values from which a random distribution of the relaxation times values occur the thin films of ZnO.…”

Section: Conductivity Measurementsmentioning

confidence: 99%

Capacitive properties of zinc oxide thin films by radiofrequency magnetron sputtering

Ondo-Ndong¹,

Essone-Obame²,

Moussambi³

et al. 2018

J Theor Appl Phys

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The study focused on the production of zinc oxide (ZnO) thin films as a dielectric material for use in metal-insulator-semiconductor capacitors. The objective of this study has demonstrated the frequency dependence of conductivity and capacity. Zinc oxide (ZnO) was thin films deposited by a silicon wavelength sputtering\magnetron cathode sputtering. The capacitive properties of ZnO zinc oxide were studied at room temperature. The frequency dependence of the conductivity, capacitance and the measured current-voltage (I-V) characteristics of ZnO zinc oxide thin films were studied in the frequency range from 5 kHz to 13 MHz. It is shown that the conductivity is total. Indeed, the measurement of the conductivity in alternating regime obeys the Arrhenius equation. In addition, the measured I-V characteristics of the structures studied at 10 kHz and 10 MHz clearly revealed areas of accumulation, depletion and inversion in the plots. It has been observed that AC conductivity and capacity in the ZnO thin films (ZnO) are frequency dependent. This dependence indicates that the conduction is thermally activated and maintains the correlated barrier of the charge carrier on the localized states as a function of the experimental data. The FBAR (expand) devices with the ZnO films exhibited a pronounced resonance peak centered at 537 MHz with a k 2 coupling coefficient of 7%. It found therefore that the impedance matching of the FBAR could be easily achieved simply by controlling the resonance the resonator.

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Section: Conductivity Measurementsmentioning

confidence: 99%

Capacitive properties of zinc oxide thin films by radiofrequency magnetron sputtering

Ondo-Ndong¹,

Essone-Obame²,

Moussambi³

et al. 2018

J Theor Appl Phys

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“…Relaxation time is not a constant value as it is a function of the distance that a hopping electron should cover [42]. Distances between individual nanoparticles are random values and that is why Fig.…”

Section: Experimental Results and Their Analysismentioning

confidence: 97%

Study of dielectric function of (FeCoZr)x(CaF2)(100−x) nanocomposites produced with a beam of argon ions

Kołtunowicz

Żukowski

Bondariev

et al. 2015

Journal of Alloys and Compounds

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Capacitive properties of nanocomposite (FeCoZr) x (PZT)(100−x) produced by sputtering with the use of argon and oxygen ions beam

Kołtunowicz

Boiko

Czarnacka

et al. 2015

J Mater Sci: Mater Electron

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The paper established that, the hopping mechanism of the charge exchange for the (FeCoZr) 64.4 (PZT) 35.6 nanocomposite and the additional polarization of tested sample occurs. As frequency increases two frequency areas where capacitance decreases can be observed. Correlation between the conductivity increase and the capacitance decrease has been observed for the both stages of their variability. Voltage resonance phenomenon for the studied material was observed. The zero crossing in the frequency dependence of phase difference transition is accompanied with this phenomenon, which is reflected by a sharp minimum in the capacitance versus frequency characteristics.

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Dielectric properties of the semiconducting compounds Cd[sub 1−x]Fe[sub x]Te

Cited by 5 publications

References 0 publications

Capacitive properties of zinc oxide thin films by radiofrequency magnetron sputtering

Capacitive properties of zinc oxide thin films by radiofrequency magnetron sputtering

Study of dielectric function of (FeCoZr)x(CaF2)(100−x) nanocomposites produced with a beam of argon ions

Capacitive properties of nanocomposite (FeCoZr) x (PZT)(100−x) produced by sputtering with the use of argon and oxygen ions beam

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