2005
DOI: 10.1016/j.solmat.2004.02.052
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Dielectric properties of vacuum deposited Bi2Te3 thin films

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Cited by 22 publications
(13 citation statements)
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“…As film thickness increases, the strain and dislocation density decreases progressively. This may be due to the movement of interstitial atoms from its grain boundary to the crystallites, which may be leading to reduction in the concentration of lattice imperfections [12]. Fig.…”
Section: Structural Analysismentioning
confidence: 99%
“…As film thickness increases, the strain and dislocation density decreases progressively. This may be due to the movement of interstitial atoms from its grain boundary to the crystallites, which may be leading to reduction in the concentration of lattice imperfections [12]. Fig.…”
Section: Structural Analysismentioning
confidence: 99%
“…6 are summarized in Table II. The frequency behavior of ESs comprised of GHEs with varying NaCl concentrations was studied by complex power equations. EIS data for ESs are analyzed in the light of information available in the literature 51,57,58 to evaluate the relaxation time constant ͑ o ͒ that corresponds to a phase angle of +45°and represents a transition for ES from a resistive behavior for frequencies higher than 1/ o to a capacitive behavior for frequencies lower than 1/ o . These plots allow overarching the entire frequency spectrum for the ESs, ranging from a pure resistance at high frequencies to a pure capacitance at low frequencies.…”
Section: A76mentioning
confidence: 99%
“…Preparation of these chalcogenide thermoelectric materials in thin film form is highly required to fabricate an active micro-cooling device in chip level. Bismuth telluride thin films have been elaborated by a variety of deposition techniques, such as evaporation [5][6][7][8], pulsed laser deposition [9,10], sputtering [11], and electrochemical deposition [12]. Even though high quality epitaxial films could be obtained by metal organic chemical vapor deposition (MOCVD) [13,14] and molecular beam epitaxy (MBE) [15,16], preparation of thermoelectric films by more conventional deposition technique is highly requested in related industry.…”
Section: Introductionmentioning
confidence: 99%