Dielectric properties of (Yb0.5Ta 0.5)xTi1−xO2 ceramics with colossal permittivity and low dielectric loss

Jiao, Lei; Guo, Pengwei; Kong, D. J.; Huang, Xinpeng; Li, Hui

doi:10.1007/s10854-020-02923-9

Cited by 11 publications

(5 citation statements)

References 29 publications

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“…Additionally, the grain in the co-doped samples seems to be composed of smaller subgrains as shown by the red-dashed line in the SEM micrograph of the sample x = 0.025 (Figure 3). Similar observations on the effect of doping content on the grain size have been reported [25][26][27]. This behavior was attributed to the effect of the secondary phase in inhibiting grain growth [25] and/or the increased number of nuclei centers with increasing doping content [27].…”

Section: Resultssupporting

confidence: 81%

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

et al. 2022

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(Nb5+, Si4+) co-doped TiO2 (NSTO) ceramics with the compositions (Nb0.5Si0.5)xTi1−xO2, x = 0, 0.025, 0.050 and 0.1 were prepared with a solid-state reaction technique. X-ray diffraction (XRD) patterns and Raman spectra confirmed that the tetragonal rutile is the main phase in all the ceramics. Additionally, XRD revealed the presence of a secondary phase of SiO2 in the co-doped ceramics. Impedance spectroscopy analysis showed two contributions, which correspond to the responses of grain and grain-boundary. All the (Nb, Si) co-doped TiO2 showed improved dielectric performance in the high frequency range (>103 Hz). The sample (Nb0.5Si0.5)0.025Ti0.975O2 showed the best dielectric performance in terms of higher relative permittivity (5.5 × 104) and lower dielectric loss (0.18), at 10 kHz and 300 K, compared to pure TiO2 (1.1 × 103, 0.34). The colossal permittivity of NSTO ceramics is attributed to an internal barrier layer capacitance (IBLC) effect, formed by insulating grain-boundaries and semiconductor grains in the ceramics.

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Section: Resultssupporting

confidence: 81%

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

et al. 2022

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“…The LuNbTiO6 ceramic particles may exert a significant influence on the electrical and dielectric properties exhibited by the LuNTO ceramics. The presence of the secondary RENbTiO6 and RE2Ti2O7 phases has previously been reported in other co-doped TiO2 systems, such as Dy 3+ /Nb 5+ [21], (Y 3+ /Yb 3+ /Sm 3+ /Gd 3+ )/Nb 5+ [20,39], Pr 3+ /Nb 5+ [40], La 3+ /Nb 5+ [26], Sm 3+ /Ta 5+ [30], and Yb 3+ /Ta 5+ [29]. Figure 3 shows the elemental distribution of each element within the LuNTO-2 ceramic obtained via SEM-EDS mapping.…”

Section: Microstructure Analysissupporting

confidence: 67%

“…These results are extremely hard to replicate in other varieties of GD oxides, including CCTO and other related compounds [2,48,49], CuO [6], co-doped NiO [50], and La 2−x Sr x NiO 4 ceramics [7]. Furthermore, the excellent dielectric parameters exhibited by the LuNTO-1 ceramics form one of the most interesting Ln 3+ /Nb 5+ (or Ta 5+ ) co-doped TiO 2 systems [22,23,26,[28][29][30]. These values are comparable to the ones reported in other Ln 3+ /Nb 5+ (Ta 5+ ) co-doped TiO 2 systems, such as Gd 3+ /Nb 5+ (tanδ ≈ 0.027 and ε' ≈ 5.6 × 10 4 ) [39], La 3+ /Nb 5+ (tanδ ≈ 0.019 and ε' ≈ 2 × 10 4 ) [22], Eu 3+ /Nb 5+ modified with B 2 O 3 (tanδ ≈ 0.012 and ε' ≈ 4.1 × 10 4 ) [23], Nd 3+ /Ta 5+ (tanδ ≈ 0.008 and ε' ≈ 8.2 × 10 4 ) [25], Dy 3+ /Nb 5+ (tanδ ≈ 0.078 and ε' ≈ 6.4 × 10 4 ) [21], and Pr 3+ /Nb 5+ (tanδ ≈ 0.037-0.075 and ε' ≈ 6-8 × 10 4 ) [40].…”

Section: Giant Dielectric Propertiesmentioning

confidence: 96%

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Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

et al. 2021

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Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε’ > 104) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε’ continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε’ value of approximately 7.55 × 104 and an extremely low tanδ value of approximately 0.007 at 103 Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu3+/Nb5+ co-doped TiO2 (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε’ values between the temperatures of −60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO6 microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti3+ ions formed by Nb5+ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.

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“…The permittivity has good stability over a wide frequency range (10 2 ∼ 10 7 Hz), all above 10 3 , and the results were similar to those obtained by conventional sintering. [38][39][40] As the doping concentration increases, the dielectric constant increases and then decreases, and the amplitude is large. Meanwhile, the dielectric loss shows the same pattern with the appearance of peaks.…”

Section: Resultsmentioning

confidence: 99%

Dielectric Performance of DC Electric Field-Assisted Flash Sintered (Sr, Sb) co-doped TiO₂ Ceramics

Zhang,

Feng,

Wang

et al. 2023

ECS J. Solid State Sci. Technol.

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(Sr + Sb) co-doped TiO2 colossal dielectric ceramics were fabricated via flash sintering under an electric field of 500 V/cm. The flash sintering parameters, phase structure, and electrical properties of all ceramic samples were systematically analyzed. Compared with conventional sintering, the sintering temperature was reduced by about 200℃ and the sintering time was reduced by 90% (18min, 1150℃). (Sr + Sb) co-doped TiO2 ceramics had good dielectric properties (ε′ > 104). The successful preparation of co-doped rutile TiO2 dielectric ceramics broadens the application range of flash sintering technology, which is of great research significance.

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Dielectric properties of (Yb0.5Ta 0.5)xTi1−xO2 ceramics with colossal permittivity and low dielectric loss

Cited by 11 publications

References 29 publications

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Dielectric Performance of DC Electric Field-Assisted Flash Sintered (Sr, Sb) co-doped TiO₂ Ceramics

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Dielectric properties of (Yb0.5Ta 0.5)xTi1−xO2 ceramics with colossal permittivity and low dielectric loss

Cited by 11 publications

References 29 publications

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Dielectric Performance of DC Electric Field-Assisted Flash Sintered (Sr, Sb) co-doped TiO2 Ceramics

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Dielectric Performance of DC Electric Field-Assisted Flash Sintered (Sr, Sb) co-doped TiO₂ Ceramics