Dielectric relaxation analysis of Pb(Zr0.54,Ti0.46)O3 thin films: Electric field dependence

Abstract

Articles you may be interested inMicrostructure and electrical properties of LaNiO3 thin films by RF sputtering for the growth of (Pb,La)(Zr,Ti)O3 films on silicon and nickel substrates Analysis of size effects in Pb ( Zr 0.54 Ti 0.46 ) O 3 thin film capacitors with platinum and LaNiO 3 conducting oxide electrodes

Dielectric relaxations of lead zirconate titanate films up to millimeter‐wave frequencies

“…In the case where both low‐ and high‐frequency relaxations were reported, they were proposed to arise from a random distribution of charged defects, supported by observations on differently doped materials 45 . One of the most popular explanations is that relaxations arise from damped mechanical shear mode resonances of individual domains, domain walls, or the grains in polycrystalline materials, excited by the piezoelectric nature of the ferroelectrics 30,42,43 46,47 . In this case, the relaxation frequency is: 46 $$\begin{equation} f_{\mathrm{r}}=\frac{\sqrt {c_{55}^{*} / \rho }}{\pi d} , \end{equation}$$…”

“…35,36 Some authors explicitly report on the absence of dielectric relaxations in ferroelectric films in this frequency range, even though they are observed in bulk material. [37][38][39][40] With respect to the high-frequency relaxation 2, there are a few reports on comparable phenomena in ferroelectric films [41][42][43] and antiferroelectric bulk ceramics. 44 A combination of the two relaxations was reported for bulk PZT ceramics with high Ti-content, 14 that is, on the tetragonal side of the MPB, though relaxation 2 was not directly observed, but just obtained by extrapolation assuming a Debye-like relaxation.…”