2016
DOI: 10.1016/j.jallcom.2015.07.181
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Dielectric relaxations and electrical properties of Aurivillius Bi3.5La0.5Ti2Fe0.5Nb0.5O12 ceramics

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Cited by 41 publications
(13 citation statements)
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“…In this report, at high temperature, the activation energies of conduction and relaxation are in good agreement to the previous reports. In the BTFT ceramics, the formation of oxygen vacancies as a result of bismuth volatilization at high sintering temperature could play a key role in the conduction and relaxation behaviors . The conduction of the BTFT ceramics at high temperature may be due to the long‐range movement of doubly ionized oxygen vacancies and the relaxation behavior may be owing to the short‐range hopping of doubly ionized oxygen vacancies .…”
Section: Resultsmentioning
confidence: 99%
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“…In this report, at high temperature, the activation energies of conduction and relaxation are in good agreement to the previous reports. In the BTFT ceramics, the formation of oxygen vacancies as a result of bismuth volatilization at high sintering temperature could play a key role in the conduction and relaxation behaviors . The conduction of the BTFT ceramics at high temperature may be due to the long‐range movement of doubly ionized oxygen vacancies and the relaxation behavior may be owing to the short‐range hopping of doubly ionized oxygen vacancies .…”
Section: Resultsmentioning
confidence: 99%
“…In the BTFT ceramics, the formation of oxygen vacancies as a result of bismuth volatilization at high sintering temperature could play a key role in the conduction and relaxation behaviors. 52,53 The conduction of the BTFT ceramics at high temperature may be due to the long-range movement of doubly ionized oxygen vacancies 54,55 and the relaxation behavior may be owing to the short-range hopping of doubly ionized oxygen vacancies. 51 At low temperatures, the conduction might be due to the movement of electrons and the relaxation might be due to the localized hopping of electrons acting as the reorientation of dipoles at low temperatures.…”
Section: Electrical Properties and Kinetic Analysis Of Conduction-rmentioning
confidence: 99%
“…Figure 5a shows the imaginary part of the impedance Z" versus the imaginary part Z' of the impedance plots (Nyquist plots) below 260 K (for AM1). The irregular semicircular arc radius decreases with the Impedance spectrum analysis is a common method for analyzing the contributions of different microstructural components to the relaxation in ceramic materials [4,28]. In order to get a deep insight into the nature of the relaxation process, the impedance spectrum has been studied.…”
Section: Resultsmentioning
confidence: 99%
“…The relation between physical properties and microstructure (such as grains, grain boundaries, sample-electrode interfaces, and so on) is an important aspect for ceramic materials and is helpful for better understanding their electrical properties [1][2][3][4][5]. Dielectric, modulus, and impedance measurements are the most widely used characterization methods for investigating the microstructure-property relation and relaxation mechanism.…”
Section: Introductionmentioning
confidence: 99%
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