Dielectric response function of GaPAs solid solutions in the vibrational absorption region

Goncharenko, Anatoliy V.; Gorea, O.; Dmitruk, N. L.; Mikhailik, A. A.; Romanyuk, V. R.

doi:10.1134/1.1395117

Cited by 3 publications

(2 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…͑2͔͒ of the dielectric response function should be used for In 1Ϫx Ga x As. 16 In performing the fitting, three LO-TO pairs were used, which correspond to GaAs-like, disorder-induced, and InAs-like phonons, respectively. 6,9 Parameters such as the dielectric constant and phonon frequencies and damping constants were evaluated numerically by minimizing the fitted mean-squares deviation in a regression program.…”

mentioning

confidence: 99%

Infrared dielectric response function of strained In1−xGaxAs/InP epilayers

Rowell

Lockwood

et al. 2002

Applied Physics Letters

View full text Add to dashboard Cite

Polarized infrared reflectivity measurements have been performed on strained In1−xGaxAs epilayers grown by chemical beam epitaxy on semi-insulating InP(100) with x varied from 0.314 to 0.556. Fitting of the reflectance spectra yielded excellent agreement with three longitudinal and transverse optical phonon pairs, corresponding to GaAs-like, disorder-induced, and InAs-like modes. The dielectric response function and phonon frequency dependences for all modes were obtained versus Ga fraction.

show abstract

mentioning

confidence: 99%

Infrared dielectric response function of strained In1−xGaxAs/InP epilayers

Rowell

Lockwood

et al. 2002

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…According to the technology of the obtaining Cd X Zn (1−X) P 2 solid solutions, most of the ZnP 2 nanoclusters are located in the near surface area. It has been shown [ 8 ], that surface polaritons are very sensitive to the presence of the surface defects and impurities. The dispersion and the damping of surface polaritons, that are localized in a thin surface layer with the thickness of the order of the reciprocal value of the damping constant, are very sensitive to the characteristics of the surface including the structure of the crystal and its relief [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Spectroscopy of the Surface Polaritons in the CdXZn(1−X)P2 Solid Solutions

et al. 2017

View full text Add to dashboard Cite

Here we report on the analysis of the effect of the doping of CdP2 single crystals by ZnP2 nanoclusters on the dispersion of the surface polaritons (SP). The ATR spectroscopic technique has been applied to excite the SP in the CdXZn(1−X)P2 system. Analysis of the obtained spectra has shown that the doping of CdP2 single crystals by ZnP2 nanoclusters result in the position and the width of the dispersion branches of the SP. This effect is more pronounced in the low frequency dispersion branches. These SP branches are originated from phonons which correspond to the motion of the cation sublattice.

show abstract

Infrared Dielectric Properties of In_1-xGa_xAs Epilayers on InP (100)

Rowell

Lockwood

et al. 2003

MRS Proc.

View full text Add to dashboard Cite

The concentration dependence of optical phonons in strained In1-xGaxAs epilayers grown on InP (100) by chemical beam epitaxy has been characterized with oblique angle polarized far-infrared reflectivity measurements. In this powerful method, the reflectance spectra contain sharp Berreman peaks exactly at the optical phonon frequencies. For radiation polarized in the plane of incidence (p-polarized), peaks for both the TO and LO phonons were observed. For s-polarization only the TO modes were observed. For heavily doped substrates the TO film phonons were observed as reflectance minima, whereas for lightly doped substrates they were seen as maxima. The measured spectra were curve resolved to separate the effects of the various modes which included GaAs-like longitudinal and transverse optic (LO and TO), a disorder induced, and InAs-like LO and TO phonons. The dielectric response function and phonon frequency dependences for all modes were obtained versus Ga fraction for x from 0.25 to 0.75 and the latter showed a quadratic dependence on x over this range. The effects of strain on the phonon frequencies could then be evaluated.

show abstract

Dielectric response function of GaPAs solid solutions in the vibrational absorption region

Cited by 3 publications

References 33 publications

Infrared dielectric response function of strained In1−xGaxAs/InP epilayers

Infrared dielectric response function of strained In1−xGaxAs/InP epilayers

Spectroscopy of the Surface Polaritons in the CdXZn(1−X)P2 Solid Solutions

Infrared Dielectric Properties of In_1-xGa_xAs Epilayers on InP (100)

Contact Info

Product

Resources

About

Dielectric response function of GaPAs solid solutions in the vibrational absorption region

Cited by 3 publications

References 33 publications

Infrared dielectric response function of strained In1−xGaxAs/InP epilayers

Infrared dielectric response function of strained In1−xGaxAs/InP epilayers

Spectroscopy of the Surface Polaritons in the CdXZn(1−X)P2 Solid Solutions

Infrared Dielectric Properties of In1-xGaxAs Epilayers on InP (100)

Contact Info

Product

Resources

About

Infrared Dielectric Properties of In_1-xGa_xAs Epilayers on InP (100)