Dielectric Response of <scp><scp>BaTiO</scp><sub>3</sub></scp> Thin Film with Grain Size at Nanometer Scale

Tyunina, M.; Malič, Barbara; Plekh, M.; Kosec, Marija

doi:10.1111/j.1551-2916.2011.04950.x

Cited by 13 publications

(15 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This corresponds well to the grain size effect observed for ferroelectric ceramics materials; For example, BaTiO 3 ceramics with grain size lower than around 100 nm are not ferroelectrics, because grain size is too small to allow for the occurrence of ferroelectric ordering and so the structure is no more tetragonal but becomes cubic [39][40][41]. This behavior also corresponds well to previous results obtained by ADM: ferroelectric behavior was only obtained after thermal annealing of the films [13,30,31,[34][35][36].…”

Section: Electrical Propertiessupporting

confidence: 87%

Elaboration of lead-free Na 0.5 Bi 0.5 TiO 3 –BaTiO 3 (NBT-BT) thick films by aerosol deposition method (ADM)

Isaza-Ruiz

Henon

Durand-Panteix³

et al. 2016

Ceramics International

View full text Add to dashboard Cite

a b s t r a c tThick and dense ceramic films of lead-free 0.94Na 0.5 Bi 0.5 TiO 3 -0.06 BaTiO 3 (NBT-BT) composition were elaborated by aerosol deposition method (ADM) at room temperature. A powder of suitable grain size was elaborated by solid state reaction. Using this powder, two samples were elaborated by ADM respectively on glass and metallic substrates, in order to check for microstructure and electrical properties. This process allowed obtaining a thick film (3.2 mm) with dense microstructure. Measurement of electrical properties revealed a lossy dielectric behavior indicating interfacial phenomena at the electrodefilm interface. The measurement of the ferroelectric hysteresis cycle does not show any characteristics of a ferroelectric behavior, but corresponds well to the one of a lossy non-linear dielectric. The absence of ferroelectricity is probably due to the low grain size of the obtained thick film (130 nm). Further experiments are in progress in order to try to obtain ferroelectric properties.

show abstract

Section: Electrical Propertiessupporting

confidence: 87%

Elaboration of lead-free Na 0.5 Bi 0.5 TiO 3 –BaTiO 3 (NBT-BT) thick films by aerosol deposition method (ADM)

Isaza-Ruiz

Henon

Durand-Panteix³

et al. 2016

Ceramics International

View full text Add to dashboard Cite

show abstract

“…However, we have recently demonstrated that individual nanograins maintain ferroelectricity and the ability of local switching in similarly nanostructured BiScO 3 –PbTiO 3 , a result also confirmed by the Raman measurements previously discussed. A possible explanation for this apparent contradiction could be a dilution effect in the permittivity of NSC materials as a consequence of the dramatic increase in the number of low‐permittivity grain boundaries with decreasing grain sizes down to the nanoscale . The thermodynamic theory shows that a strong depletion of the anomaly is expected, even in the case of negligible dead layers as a surface effect associated with the polarization gradient at grain boundaries …”

Section: Resultsmentioning

confidence: 99%

“…Grain size effects have been extensively studied for the electrical properties of ceramic materials of BaTiO 3 model ferroelectric with perovskite tetragonal structure down to a size of 20 nm, within the frame of the miniaturization of multilayer ceramic capacitors . Vanishing of the dielectric anomaly associated with the ferroelectric transition and incipient if any ferroelectric switching have been found below an average grain size of 50 nm.…”

Section: Introductionmentioning

confidence: 99%

Nanostructuring Effects in Piezoelectric BiScO₃–PbTiO₃ Ceramics

et al. 2014

View full text Add to dashboard Cite

The apparent contradiction between the persistence of the polar state in morphotropic phase boundary BiScO3–PbTiO3 at the nanoscale, and the vanishing of the macroscopic ferroelectric switching and of the dielectric anomaly associated with the ferroelectric phase transition in nanostructured ceramics is solved. Raman spectroscopy results unambiguously demonstrate that the same polar phase exists in coarse grained and nanostructured materials. Soft modes were identified and followed upon heating, which allowed transition temperatures to be estimated. A shift of only 60°C was established as the size effect down to 24 nm average sized grains. Impedance spectroscopy was used to separate grain and boundary contributions to the total electrical response. Results clearly show grain boundaries to fully dominate this response in the case of nanostructured materials, which was responsible for the vanishing of the dielectric anomaly and for a large increase in the effective coercivity, the latter resulting in the loss of functionality. This was therefore a boundary effect, liable of being recovered by boundary tailoring. Indeed, macroscopic ferroelectricity was readily uncovered when grain‐boundary density was reduced by triggering grain growth.

show abstract

“…The dielectric properties of ferroelectric perovskite thin films are known to be influenced by many effects, such as grain size, grain boundaries, film thickness, etc . In general, a reduction in the thickness and the grain size leads to a decrease in the dielectric permittivity and an increase in the dielectric losses in thin films .…”

Section: Resultsmentioning

confidence: 99%

Sol–Gel Synthesis and Characterization of Na_0.5Bi_0.5TiO₃–NaTaO₃Thin Films

2013

View full text Add to dashboard Cite

Thin films with the composition 70 mol% Na0.5Bi0.5TiO3 + 30 mol% NaTaO3 were prepared by sol–gel synthesis and spin coating. The influence of the annealing temperature on the microstructural development and its further influence on the dielectric properties in the low‐ (kHz–MHz) and microwave‐frequency (15 GHz) ranges were investigated. In the low‐frequency range we observed that with an increasing annealing temperature from 550°C to 650°C the average grain size increased from 90 to 170 nm, which led to an increase in the dielectric permittivity from 130 to 240. The temperature‐stable dielectric properties were measured for thin films annealed at 650°C in the temperature range between −25°C and 150°C. The thin films deposited on corundum substrates had a lower average grain size than those on Si/SiO2/TiO2/Pt substrates. The highest average grain size of 130 nm was obtained for a thin film annealed at 600°C, which displayed a dielectric permittivity of 130, measured at 15 GHz.

show abstract

Dielectric Response of BaTiO₃ Thin Film with Grain Size at Nanometer Scale

Cited by 13 publications

References 20 publications

Elaboration of lead-free Na 0.5 Bi 0.5 TiO 3 –BaTiO 3 (NBT-BT) thick films by aerosol deposition method (ADM)

Elaboration of lead-free Na 0.5 Bi 0.5 TiO 3 –BaTiO 3 (NBT-BT) thick films by aerosol deposition method (ADM)

Nanostructuring Effects in Piezoelectric BiScO₃–PbTiO₃ Ceramics

Sol–Gel Synthesis and Characterization of Na_0.5Bi_0.5TiO₃–NaTaO₃Thin Films

Contact Info

Product

Resources

About

Dielectric Response of BaTiO3 Thin Film with Grain Size at Nanometer Scale

Cited by 13 publications

References 20 publications

Elaboration of lead-free Na 0.5 Bi 0.5 TiO 3 –BaTiO 3 (NBT-BT) thick films by aerosol deposition method (ADM)

Elaboration of lead-free Na 0.5 Bi 0.5 TiO 3 –BaTiO 3 (NBT-BT) thick films by aerosol deposition method (ADM)

Nanostructuring Effects in Piezoelectric BiScO3–PbTiO3 Ceramics

Sol–Gel Synthesis and Characterization of Na0.5Bi0.5TiO3–NaTaO3Thin Films

Contact Info

Product

Resources

About

Dielectric Response of BaTiO₃ Thin Film with Grain Size at Nanometer Scale

Nanostructuring Effects in Piezoelectric BiScO₃–PbTiO₃ Ceramics

Sol–Gel Synthesis and Characterization of Na_0.5Bi_0.5TiO₃–NaTaO₃Thin Films