Several SrTiO 3 (STO) thin films without electrodes processed by pulsed laser deposition, of thicknesses down to 40 nm, were studied using infrared transmission and reflection spectroscopy. The complex dielectric responses of polar phonon modes, particularly ferroelectric soft mode, in the films were determined quantitatively. The compressed epitaxial STO films on (100) La 0.18 Sr 0.82 Al 0.59-Ta 0.41 O 3 substrates (strain 0.9%) show strongly stiffened phonon responses, whereas the soft mode in polycrystalline film on (0001) sapphire substrate shows a strong broadening due to grain boundaries and/or other inhomogeneities and defects. The stiffened soft mode is responsible for a much lower static permittivity in the plane of the compressed film than in the bulk samples.Keywords Soft mode . Thin film . Infrared spectroscopy SrTiO 3 (STO) is a classical incipient ferroelectric with strongly increasing permittivity on cooling-up to more than 20,000 in single crystals [1]. It is well known since 1994 [1] that the permittivity in STO thin films is strongly reduced and does not increase on cooling as much as in single crystals. It is thickness dependent, but even in the limit of very thick films it does not reach the crystal values [2]. The thickness dependence was assigned to lowpermittivity (dead) interfacial layers between the film and electrodes [2]. However, grain boundaries also play an important role in bulk ceramics as well as in thin films [3][4][5][6]. Low-permittivity grain boundaries and possible nanocracks in the films and/or ceramics decrease the effective permittivity, which is accompanied by a remarkable stiffening of the effective soft mode.Strain induced by the substrate may also influence the dielectric response of epitaxial films. The phase diagram of STO under uniaxial (biaxial) pressure was theoretically calculated from the known thermodynamic parameters [7,8]; it appears to be very sensitive to both compressive and tensile stresses. The ferroelectric transition may be also induced by the choice of appropriate substrate. For instance, the tensile in-plane stress produced by a (110) DyScO 3 substrate may induce the in-plane ferroelectricity up to room temperature [9]. Quasi-epitaxial film on (0001) sapphire exhibited ferroelectric transition near 120 K as evidenced by a softer TO 1 mode above 120 K compared to the single crystals [5]. Below the structural transition occurring probably at the same temperature, the TO 1 mode couples with the structural soft mode doublet and hardens on further cooling. On the other hand, the compressive stress induced by a (110) NdGaO 3 (NGO) substrate is responsible for the out-of plane ferroelectricity near 150 K [10] whereas the in-plane mode softening with decreasing temperature is only very weak. In the latter case, the in-J Electroceram (