Dielectric selective mirror for intracavity wavelength selection in far-infrared <i>p</i>-Ge lasers

Bosq, Todd W. Du; Peale, Robert E.; Nelson, E. W.; Muravjov, A. V.; Fredricksen, Christopher J.; Tache, N.; Tanner, D. B.

doi:10.1063/1.1618934

Cited by 8 publications

(7 citation statements)

References 18 publications

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“…Output coupling losses require the reflectivity to be better than 93%. SrTiO 3 has a reflectivity of ϳ99% at 20 K in this wavelength region, 10 although this R value should increase as the mirror temperature decreases to 4 K. The higher thresholds for the Bragg mirrors therefore suggest that their reflectivity is somewhat lower than 99%. Hence, while these experiments bracket the reflectivity of the Bragg mirror in the range of 93-99%, they fail to definitely confirm the predicted 99.9% value.…”

Section: Discussionmentioning

confidence: 93%

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Bosq¹,

Muravjov²,

Peale³

et al. 2005

Appl. Opt.

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Multilayer mirrors capable of > 99.9% reflectivity in the far infrared (70-200 microm wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 arc sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered.

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Section: Discussionmentioning

confidence: 93%

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Bosq¹,

Muravjov²,

Peale³

et al. 2005

Appl. Opt.

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show abstract

“…SrTiO 3 has a reflectivity of ~99% at 4 K in this wavelength region. 10 The higher threshold for the Bragg mirror therefore suggests that its reflectivity is somewhat lower than 99%. Hence, this simple experiment confirms that the reflectivity of the Bragg mirror is quite high, though it appears to fall short of the predicted 99.9% reflectivity.…”

Section: Discussionmentioning

confidence: 99%

High-reflectivity intracavity Bragg mirrors for the far-infrared p-Ge laser

2004

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Multi-layer mirrors capable of >99.9% reflectivity at ~100 µm wavelengths were constructed using thin silicon etalons separated by empty gaps. Due to the large difference between the index of refraction of silicon (3.384) and vacuum (1), calculations indicate that only three periods are required to produce 99.9% reflectivity. The mirror was assembled from high purity silicon wafers, with resistivity over 4000 ohm-cm to reduce free carrier absorption. Wafers were double side polished with faces parallel within 10 arc seconds. The multi-layer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser.

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“…A promising approach toward developing new selector designs is silicon process technology. Recently, we demonstrated a ÿxed wavelength selector based on a simple silicon intracavity etalon [11,12]. In this paper, we explore a new type of ÿxed wavelength selector made by etching a lamellar structure into silicon, which is then coated with gold and used as a back mirror.…”

Section: Introductionmentioning

confidence: 99%