Difference between chemical structures of the interface at the Al-oxide tunneling barrier prepared by plasma or by radical oxidation

Hong, Jongill; Lee, Donkoun; Han, Young Mi; Lee, Kye-Nam; Jang, I. W.; Park, Youngjin; Lee, Jun Young; Song, H. J.; Shin, Hyun Joon; Tsunekawa, K.; Watanabe, Naoki

doi:10.1016/j.apsusc.2007.03.072

Cited by 2 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The shift towards higher binding energy at 1000 °C is a consequence of accelerated B desorption and the formation of Al-oxides. [43][44][45] We note that our XPS did not detect the B 1s spectrum (see supplemental information).…”

Section: Resultsmentioning

confidence: 86%

Electrochemical catalysis of aluminum diboride thin film fabricated by radio-frequency magnetron sputtering

Nashimoto,

Horiguchi,

Kumatani

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This study explores a novel ambient-condition method as a potential alternative to the Haber-Bosch process for ammonia synthesis. Aluminum diborides thin films were deposited using sputtering and calcination techniques to investigate the relationship between crystallinity and various properties including electrochemical catalysis, electrical conductivity, surface morphology, and bonding states. The results indicate that the calcined films reduce the electrical resistivity and exhibit enhanced crystallinity, and catalytic activity, particularly for ammonia synthesis. The findings highlight the significant impact of crystallinity on electrocatalysis in this context.

show abstract

Section: Resultsmentioning

confidence: 86%

Electrochemical catalysis of aluminum diboride thin film fabricated by radio-frequency magnetron sputtering

Nashimoto,

Horiguchi,

Kumatani

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Such mixed oxides naturally have an imperfect microstructure, and metallic ions or oxygen vacancies are likely to exist in the matrix. 23 The oxygen-deficient AlOx phase has been reported to provide the electron trapping sites 24 and can be a reason behind the SCLC conduction observed in our device as observed during I-V measurements in HRS. In our fabricated RS device, the presence of self-compliance feature may also be attributed to the formation of AlOx layer near the top electrode between Al and CFO.…”

mentioning

confidence: 73%

Electroforming free controlled bipolar resistive switching in Al/CoFe2O4/FTO device with self-compliance effect

Munjal

Khare

2018

Applied Physics Letters

View full text Add to dashboard Cite

Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and stable resistance states without any application of compliance current (CC), with a resistance ratio of high resistance state (HRS) and low resistance state (LRS) > 10 2 . Small switching voltage (< 1 volt) and lower current in both the resistance states confirms the fabrication of low power consumption device. In the LRS, the conduction mechanism was found to be of Ohmic in nature, while the high-resistance state (HRS/OFF state) was governed by space charge-limited conduction mechanism, which indicates the presence of an interfacial layer with imperfect microstructure near the top Al/CFO interface. The device shows nonvolatile behavior with good endurance properties, acceptable resistance ratio, uniform resistive switching due to stable, less random filament formation/rupture and a control over the resistive switching properties by choosing different stop voltages, which makes the device suitable for its application in future nonvolatile resistive random access memory (ReRAM).

show abstract

Difference between chemical structures of the interface at the Al-oxide tunneling barrier prepared by plasma or by radical oxidation

Cited by 2 publications

References 18 publications

Electrochemical catalysis of aluminum diboride thin film fabricated by radio-frequency magnetron sputtering

Electrochemical catalysis of aluminum diboride thin film fabricated by radio-frequency magnetron sputtering

Electroforming free controlled bipolar resistive switching in Al/CoFe2O4/FTO device with self-compliance effect

Contact Info

Product

Resources

About