Difference-frequency mixing of output waves from a periodically poled lithium niobate optical parametric oscillator in a GaSe crystal

Measurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5×1017–6×1017 cm−3 at room temperature, and that the mobility of these holes is in the range 22–34 cm2/V s. The temperature dependence of the hole concentration is explained using the two-acceptor model, in which one acceptor level is at around 65 meV above the valence band and the other one is at ∼158 meV. The DLTS measurements yield similar results. Furthermore, the shallow acceptor impurities contribute free hole carriers and act as radiative centers; the deep acceptor impurities are nonradiative centers, which are responsible for the quenching behavior of Er-related luminescence. The temperature dependence of the hole mobility can be understood as the combined scatterings of homopolar optical phonons and ionized impurities.

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Fabrication and Optical Property of GaSe Thin Films Grown by Pulsed Laser Deposition

Lee

Hsu

et al. 2003

Jpn. J. Appl. Phys.

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The highly oriented (001) GaSe film on c-cut sapphire (0001) was successfully fabricated by pulsed laser deposition. As growth temperature decreases from 550 C to 375 C, the structure of films changes from cubic zinc-blende Ga 2 Se 3 phase to GaSe phase. The growth temperature of the critical transition from Ga 2 Se 3 phase to GaSe phase is around 500 C. From atomic force microscope (AFM) results, it is observed that the growth process of GaSe film is in the manner of layer plus island growth. Besides, the optimal growth conditions of as-grown GaSe film were obtained at a substrate temperature of 400 C and laser energy density of 11.7 J/cm 2 . When the thickness of films goes beyond 800 # A, the stress will be released and the thickness of 1200 # A results in an optimal GaSe film. Furthermore, the indirect bound exciton emission and the recombination via impurity levels or structural defects were observed from low-temperature photoluminescence measurement.

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Difference-frequency mixing of output waves from a periodically poled lithium niobate optical parametric oscillator in a GaSe crystal

Cited by 5 publications

References 12 publications

Frequency down-conversion of solid-state laser sources to the mid-infrared spectral range using non-oxide nonlinear crystals

Frequency down-conversion of solid-state laser sources to the mid-infrared spectral range using non-oxide nonlinear crystals

Electrical properties of GaSe doped with Er

Fabrication and Optical Property of GaSe Thin Films Grown by Pulsed Laser Deposition

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