Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy

Holmes, D. M.; Belk, J. G.; Sudijono, J.; Neave, J.H.; Jones, T. S.; Joyce, B. A.

doi:10.1063/1.114805

Cited by 22 publications

(16 citation statements)

References 10 publications

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“…10 The range of conditions that produce oscillations is relatively small compared to that for GaAs͑001͒ homoepitaxy. 2͒.…”

Section: Resultsmentioning

confidence: 99%

“…2͒. 10 A typical STM image ͑2000ϫ2000 Å͒ of a starting FIG. 12 In particular, for a given As/Ga ratio, there is a band of only 10-20°C for which good monolayer oscillations can be recorded; there is a much wider region over which the modulation of bilayer oscillations can be recorded.…”

Section: Resultsmentioning

confidence: 99%

“…7 Under certain growth conditions, the period of the RHEED oscillations doubles, which suggests the formation of islands with double layer steps. 10 Furthermore, the nature of the arsenic species used in growth of this nonpolar surface also has a significant effect on the resulting morphology, with As 2 producing smoother surfaces than As 4 . 9 Recent detailed RHEED studies indicate that the range of conditions which produce oscillations is relatively small compared to that for GaAs͑001͒ homoepitaxy.…”

Section: Introductionmentioning

confidence: 99%

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Different growth modes in GaAs(110) homoepitaxy

Holmes¹,

Belk²,

Sudijono³

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The initial growth stages of GaAs͑110͒ thin films during molecular beam epitaxy were studied by reflection high energy electron diffraction ͑RHEED͒ and scanning tunneling microscopy ͑STM͒. For the deposition of 0.5 monolayers ͑ML͒ at various conditions of substrate temperature, As/Ga flux ratio and As 2 /As 4 ratio, STM images are correlated with the specific growth regimes identified by in situ RHEED intensity oscillation studies. The surfaces obtained after the deposition of submonolayer coverages of GaAs show a striking growth morphology specific to each growth regime studied.

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“…10 The range of conditions that produce oscillations is relatively small compared to that for GaAs͑001͒ homoepitaxy. 2͒.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Different growth modes in GaAs(110) homoepitaxy

Holmes¹,

Belk²,

Sudijono³

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Low-temperature PL of an 18-nm-thick GaAs/(Al,Ga)As-QW shows emission at 1.53 eV with a full-width at half-maximum (FWHM) of 0.8 meV. The FWHM value exceeds that of similar QWs but with (0 0 1)-orientation by a factor of about 5 mainly due to the presence of a larger amount of bilayer growth steps at the heterointerfaces [11]. MEE growth of the well and/or barrier layers did not lead to substantial improvements of the optical properties in this material combination.…”

Section: Resultsmentioning

confidence: 95%

Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBE

Hey

Trampert

Jahn

et al. 2007

Journal of Crystal Growth

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“…6, which was plotted from RHEED oscillation data [12]. Oscillations, both bilayer and monolayer, can clearly be obtained over a significantly wider range with As 2 than As4, especially at higher substrate temperatures ( > 420 °C).…”

Section: Growth Of Gaas On (1 1 0) and (1 1 1)a Oriented Gaas Substratesmentioning

confidence: 99%

Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy

Joyce

Neave

Fahy

et al. 1996

J Mater Sci: Mater Electron

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The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 01) oriented substrates, the period of the RHEED intensity oscillation does not in general provide a measure of the growth rate. This is explained bythe very different surface chemistry involved, since the short lifetime of arsenic molecules (As= or As4) on non-(001) surfaces results in cation-stable surface conditions, which generate arsenic (anion)-induced intensity oscillations, whereas on (0 01) surfaces they are cationinduced under all normal growth conditions. The effects of this behaviour on surface morphology are illustrated, as are the relative influences of Ga and AI. STM images obtained during the first few monolayers of growth provide a detailed indication of the growth mode and in particular explain in a simple manner the origin of bilayer period RHEED intensity oscillations obtained during growth on GaAs (110).

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Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy

Cited by 22 publications

References 10 publications

Different growth modes in GaAs(110) homoepitaxy

Different growth modes in GaAs(110) homoepitaxy

Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBE

Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy

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