Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

Weilnboeck, F.; Bartis, Elliot A. J.; Shachar, S.; Oehrlein, G. S.; Farber, D.; Lii, T.; Lenox, Chet

doi:10.1116/1.4736979

Cited by 6 publications

(2 citation statements)

References 42 publications

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“…TiN) 507,508 as a hard mask in DD patterning schemes has added an additional color to address the pitch division four color problem. However, new (preferably low-k) dielectric materials outside of the Si-O-C-N phase are desired to help provide additional color and process latitude for pitch division schemes.…”

Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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“…10). 228 Titanium nitride (TiN) was commonly selected for this application due to its acceptable transparency, 229 high etch selectivity relative to other dielectric hard mask materials such as C:H and SiC:H, 230 and the ability to be removed in subsequent post etch wet cleans. 226,227 However, traditional single pass dry optical lithography methods utilizing 193 nm wavelengths became incapable of printing the finer dimensions needed for < 45 nm technologies and the lack of EUV readiness forced the transition to both immersion lithography [231][232][233][234] and pitch division/double patterning methods.…”

Section: Spacers and Hard Masks -The Disappearing Dielectricsmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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Promoting porcelain–zirconia bonding using different atmospheric pressure gas plasmas

et al. 2018

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Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

Abstract: Articles you may be interested inStudy of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch J. Vac. Sci. Technol. B 30, 021804 (2012); 10.1116/1.3690643Etching characteristics of TiN used as hard mask in dielectric etch process

Cited by 6 publications

References 42 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Promoting porcelain–zirconia bonding using different atmospheric pressure gas plasmas

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