Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE

Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy

“…These concentrations are in general agreement with results obtained by Bass and Oliver [5] and Glew [9] for S þ As , by Bass and Oliver [5] and Hudait et al [10] for Zn À Ga , and by Bass [6] and Kikkawa et al [11] for Si þ Ga . Other observations [11][12][13] for Si Ga are inconsistent with Eq. (20); the reason for the discrepancies is not clear.…”

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in AlxGa1−xN films and multiple quantum wells grown by metalorganic vapor phase epitaxy

“…In addition, the increase in the active H concentration would help the elimination reaction of CH 3 . Both can be understood by taking the presence of doping-reactants [135][136][137] into account, as follows. In the case of MOVPE of Si-doped GaAs using TMGa-AsH 3 -SiH 4 and TMGa-C 4 H 9 AsH 2 -SiH 4 systems, the reaction between SiH 4 and AsH 3 or C 4 H 9 AsH 2 forms H 3 SiAsH 2 in the boundary layer, 135,136) and H 3 SiAsH 2 is an essential doping reactant.…”

“…Both can be understood by taking the presence of doping-reactants [135][136][137] into account, as follows. In the case of MOVPE of Si-doped GaAs using TMGa-AsH 3 -SiH 4 and TMGa-C 4 H 9 AsH 2 -SiH 4 systems, the reaction between SiH 4 and AsH 3 or C 4 H 9 AsH 2 forms H 3 SiAsH 2 in the boundary layer, 135,136) and H 3 SiAsH 2 is an essential doping reactant. [135][136][137] In the present Al 0.68 Ga 0.32 N growth using TMGa-TMAl-NH 3 -CH 3 SiH 3 system, H 3 SiNH 2 is most likely effective on Si-doping, because CH 3 SiH 3 decomposes into SiH 3 much faster than SiH 4 , and SiH 3 subsequently reacts with NH 3 to form H 3 SiNH 2 .…”

“…In the case of MOVPE of Si-doped GaAs using TMGa-AsH 3 -SiH 4 and TMGa-C 4 H 9 AsH 2 -SiH 4 systems, the reaction between SiH 4 and AsH 3 or C 4 H 9 AsH 2 forms H 3 SiAsH 2 in the boundary layer, 135,136) and H 3 SiAsH 2 is an essential doping reactant. [135][136][137] In the present Al 0.68 Ga 0.32 N growth using TMGa-TMAl-NH 3 -CH 3 SiH 3 system, H 3 SiNH 2 is most likely effective on Si-doping, because CH 3 SiH 3 decomposes into SiH 3 much faster than SiH 4 , and SiH 3 subsequently reacts with NH 3 to form H 3 SiNH 2 . 138) This reaction may support the preferential incorporation of Si on cation sites to form Si III donor states with the aid of Si-N bond in the reactants, and also may enhance the decomposition of NH 3 into NH 2 and H. Because the increase in the terrace width is linked with the decrease in N , NRC it is reasonable to consider that N NRC in the Si-doped "wells" and at their upper interfaces are decreased by maintaining appropriate surface atomic structures during the growth.…”

Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors

“…The increase in domain size by doping Si in the present Al 0.68 Ga 0.32 N wells was, therefore, most probably caused by the doping-assisted mobility enhancement of (CH 3 )xAl species and an increase in the amount of active H, which facilitated the formation of CH 4 . These can be explained by taking the presence of doping reactants [164][165][166][167] into account, as follows. In the case of 164,165) and H 3 SiAsH 2 is the essential doping reactant.…”